DEPENDENCE OF DOPING ON SUBSTRATE ORIENTATION FOR GAASC GROWN BY OMVPE

被引:17
作者
CANEAU, C
BHAT, R
KOZA, MA
机构
关键词
D O I
10.1016/0022-0248(92)90097-3
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
In this letter, we report on the behavior of C doping in GaAs versus substrate orientation, in low pressure organometallic vapor phase epitaxy. The data confirm the previously observed trend of higher acceptor incorporation on A than on B type planes.
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页码:467 / 469
页数:3
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