INTERFACE BETWEEN LOW-TEMPERATURE-GROWN GAAS AND UNDOPED GAAS AS A CONDUCTION BARRIER FOR BACK GATES

被引：14

作者：

MARANOWSKI, KD ^{[1
]}

IBBETSON, JP ^{[1
]}

CAMPMAN, KL ^{[1
]}

GOSSARD, AC ^{[1
]}

机构：

[1] UNIV CALIF SANTA BARBARA,DEPT MAT,SANTA BARBARA,CA 93106

来源：

APPLIED PHYSICS LETTERS | 1995年 / 66卷 / 25期

关键词：

D O I：

10.1063/1.113387

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We present a back gated 2DEG (two-dimensional electron gas) structure using low-temperature grown (LTG) GaAs as a barrier layer between the back gate and the undoped GaAs channel. The sheet concentration of the 2DEG can be linearly varied from full depletion up to 3×1011 cm-2 at 12 K. When this charge modulation is modeled by a simple parallel plate capacitor, we find that the distance between the plates is approximately equal to the channel thickness rather than the actual spacing between the 2DEG and the back gate (which is the channel thickness plus the LTG GaAs thickness). We explain this behavior by observing that the leakage path is limited by the triangular barrier to conduction formed at the interface between the LTG GaAs defect band and the undoped GaAs channel conduction band.© 1995 American Institute of Physics.

引用

页码：3459 / 3461

页数：3

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