STRUCTURE AND ENERGY-LEVELS OF DISLOCATIONS IN SILICON

被引：37

作者：

MARKLUND, S

机构：

来源：

JOURNAL DE PHYSIQUE | 1983年 / 44卷 / NC-4期

关键词：

D O I：

10.1051/jphyscol:1983403

中图分类号：

学科分类号：

摘要：

引用

页码：25 / 35

页数：11

共 47 条

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