1.55 MU-M DFB LASERS WITH FE-DOPED INP CURRENT BLOCKING LAYERS GROWN BY 2-STEP MOVPE

被引：7

作者：

WADA, H

HORIKAWA, H

MATSUI, Y

OGAWA, Y

KAWAI, Y

机构：

来源：

ELECTRONICS LETTERS | 1989年 / 25卷 / 02期

关键词：

D O I：

10.1049/el:19890097

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：133 / 134

页数：2

共 7 条

[1] HIGH-SPEED INGAASP CONSTRICTED-MESA LASERS [J].

BOWERS, JE ;

HEMENWAY, BR ;

GNAUCK, AH ;

WILT, DP .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1986, 22 (06) :833-844

[2] HIGH-SPEED AND HIGH-POWER 1.3-MU-M INGAASP BURIED CRESCENT INJECTION-LASERS WITH SEMIINSULATING CURRENT BLOCKING LAYERS [J].

CHENG, WH ;

SU, CB ;

BUEHRING, KD ;

HUANG, SY ;

POOLADDEJ, J ;

WOLF, D ;

PERRACHIONE, D ;

RENNER, D ;

HESS, KL ;

ZEHR, SW .

APPLIED PHYSICS LETTERS, 1987, 51 (22) :1783-1785

[3] HETEROEPITAXIAL GROWTH OF INP ON A GAAS SUBSTRATE BY LOW-PRESSURE METALORGANIC VAPOR-PHASE EPITAXY [J].

HORIKAWA, H ;

OGAWA, Y ;

KAWAI, Y ;

SAKUTA, M .

APPLIED PHYSICS LETTERS, 1988, 53 (05) :397-399

[4] SEMI-INSULATING BLOCKED PLANAR BH GAINASP-INP LASER WITH HIGH-POWER AND HIGH MODULATION BANDWIDTH [J].

KOREN, U ;

MILLER, BI ;

EISENSTEIN, G ;

TUCKER, RS ;

RAYBON, G ;

CAPIK, RJ .

ELECTRONICS LETTERS, 1988, 24 (03) :138-140

[5] HIGH-POWER 1.3-MUM INGAASP P-SUBSTRATE BURIED CRESCENT LASERS [J].

SAKAKIBARA, Y ;

HIGUCHI, H ;

OOMURA, E ;

NAKAJIMA, Y ;

YAMAMOTO, Y ;

GOTO, K ;

NAMIZAKI, H ;

IKEDA, K ;

SUSAKI, W .

JOURNAL OF LIGHTWAVE TECHNOLOGY, 1985, 3 (05) :978-984

[6] PLANAR-EMBEDDED INGAASP/INP HETEROSTRUCTURE LASER WITH A SEMIINSULATING INP CURRENT-BLOCKING LAYER GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].

SANADA, T ;

NAKAI, K ;

WAKAO, K ;

KUNO, M ;

YAMAKOSHI, S .

APPLIED PHYSICS LETTERS, 1987, 51 (14) :1054-1056

[7] 15-GHZ DIRECT MODULATION BANDWIDTH OF VAPOR-PHASE REGROWN 1.3 MU-M INGAASP BURIED-HETEROSTRUCTURE LASERS UNDER CW OPERATION AT ROOM-TEMPERATURE [J].

SU, CB ;

LANZISERA, V ;

OLSHANSKY, R ;

POWAZINIK, W ;

MELAND, E ;

SCHLAFER, J ;

LAUER, RB .

ELECTRONICS LETTERS, 1985, 21 (13) :577-579

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