CHARACTERIZATION OF INTERDIFFUSION COEFFICIENTS IN GAAS-ALAS SUPERLATTICES WITH LASER RAMAN-SPECTROSCOPY

被引：10

作者：

HARA, N

KATODA, T

机构：

[1] Department of Electronic Engineering, Faculty of Engineering, University of Tokyo, Bunkyo-ku, Tokyo 113

来源：

JOURNAL OF APPLIED PHYSICS | 1991年 / 69卷 / 04期

关键词：

D O I：

10.1063/1.348737

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A new method to estimate interdiffusion coefficients in superlattices (SLs) is proposed. The method is based on measurement of thicknesses of layers which remain without forming an alloy after an annealing that induced interdiffusion. The measurement was done from the frequency of phonons based on the Raman spectra. Values of interdiffusion coefficients obtained by the method were almost in the same order as those reported previously. It is also shown that the gallium atoms in GaAs-AlAs SLs diffuse more rapidly into AlAs layers than aluminum atoms which diffuse into GaAs layers. Interdiffusion coefficients decreased at first with the annealing time and increased slightly when the annealing was done for more than 1.5 h at 860-degrees-C.

引用

页码：2112 / 2116

页数：5

共 9 条

[1] MOCVD GROWTH AND CHARACTERIZATION BY RAMAN-SCATTERING, X-RAY-DIFFRACTION AND AUGER-SPECTROSCOPY OF SHORT-PERIOD GAAS/ALAS AND GAAS/GA1-XALXAS SUPERLATTICES [J].