SIO2-FILMS DEPOSITED ON SI BY DUAL ION-BEAMS

被引：6

作者：

MINOWA, Y

ITO, H

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1988年 / 6卷 / 01期

关键词：

D O I：

10.1116/1.583979

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：473 / 476

页数：4

共 9 条

[1] FUJIME K, 1986, P INT WORKSHOP ICBT, P195
[2] CHARACTERISTICS OF TIO2 FILMS DEPOSITED BY A REACTIVE IONIZED CLUSTER BEAM
FUKUSHIMA, K
YAMADA, I
TAKAGI, T
[J]. JOURNAL OF APPLIED PHYSICS, 1985, 58 (11) : 4146 - 4149
[3] ITOH H, 1986, P INT WORKSHOP ICBT, P17
[4] SIO2-FILMS DEPOSITED ON SI BY AN IONIZED CLUSTER BEAM
MINOWA, Y
YAMANISHI, K
TSUKAMOTO, K
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (04): : 1148 - 1151
[5] IONIZED-CLUSTER BEAM DEPOSITION AND EPITAXY
TAKAGI, T
YAMADA, I
MATSUBARA, K
[J]. THIN SOLID FILMS, 1979, 58 (01) : 9 - 19
[6] OPTICAL AND THERMAL-PROPERTIES OF BEO THIN-FILMS PREPARED BY REACTIVE IONIZED-CLUSTER BEAM TECHNIQUE
TAKAGI, T
MATSUBARA, K
TAKAOKA, H
[J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (10) : 5419 - 5424
[7] IONIZED-CLUSTER BEAM EPITAXY
TAKAGI, T
YAMADA, I
MATSUBARA, K
TAKAOKA, H
[J]. JOURNAL OF CRYSTAL GROWTH, 1978, 45 (01) : 318 - 325
[8] MN-IMPLANTED ZNS THIN-FILM ELECTROLUMINESCENT DEVICE
TAKAGI, T
YAMADA, I
SASAKI, A
ISHIBASHI, T
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1973, ED20 (11) : 1110 - 1114
[9] TAKAGI T, 1975, 4TH P INT C ION IMPL, P275