LOW-THRESHOLD CURRENT-DENSITY INGAASP/INP INJECTION-LASERS WITH 3-LAYER-WAVEGUIDE DOUBLE HETEROSTRUCTURE (JTH-CONGRUENT TO-0-5KA/CM2 AT 300-K)

被引：6

作者：

DRAKIN, AE ^{[1
]}

ELISEEV, PG ^{[1
]}

SVERDLOV, BN ^{[1
]}

DOLGINOV, LM ^{[1
]}

SHEVCHENKO, EG ^{[1
]}

机构：

[1] MOSCOW RARE MET IND RES INST,MOSCOW,USSR

来源：

ELECTRONICS LETTERS | 1984年 / 20卷 / 13期

关键词：

D O I：

10.1049/el:19840388

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：559 / 561

页数：3

共 7 条

[1]

BEZOTOSNYI VV, 1980, KVANTOVAYA ELEKTRON+, V7, P1990

[2]

BOGATOV AP, 1975, SOV J QUANTUM ELECTR, P1281

[3] LOW-THRESHOLD SINGLE QUANTUM WELL (60 A) GAAIAS LASERS GROWN BY MO-CVD WITH MG AS P-TYPE DOPANT [J].

BURNHAM, RD ;

STREIFER, W ;

SCIFRES, DR ;

LINDSTROM, C ;

PAOLI, TL ;

HOLONYAK, N .

ELECTRONICS LETTERS, 1982, 18 (25-2) :1095-1097

[4]

DOLGINOV LM, 1982, KVANTOVAYA ELEKTRON+, V9, P1749

[5] LOW THRESHOLD CURRENT-DENSITY (100) GAINASP-INP DOUBLE-HETEROSTRUCTURE LASERS FOR WAVELENGTH 1.3-MU-M [J].

ITAYA, Y ;

SUEMATSU, Y ;

KATAYAMA, S ;

KISHINO, K ;

ARAI, S .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1979, 18 (09) :1795-1805

[6] VERY LOW THRESHOLD GAINASP-INP DOUBLE-HETEROSTRUCTURE LASERS GROWN BY LP MOCVD [J].

RAZEGHI, M ;

HERSEE, S ;

HIRTZ, P ;

BLONDEAU, R ;

DECREMOUX, B ;

DUCHEMIN, JP .

ELECTRONICS LETTERS, 1983, 19 (09) :336-337

[7] ANALYSIS OF RADIATIVE AND NONRADIATIVE RECOMBINATION LAW IN LIGHTLY DOPED INGAASP LASERS [J].

THOMPSON, GHB .

ELECTRONICS LETTERS, 1983, 19 (05) :154-155

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