A SUBMICROMETER MEGABIT DRAM PROCESS TECHNOLOGY USING TRENCH CAPACITORS

[1] AMAZAWA T, 1983, 15TH C SOL STAT DEV, P229

[2] AMAZAWA T, 1984, 16TH C SOL STAT DEV

[3] ASAKAWA H, 1982, S VLSI TECH, P88

[4] CHWANG R, 1983, ISSCC, P56

[5] DESIGN OF ION-IMPLANTED MOSFETS WITH VERY SMALL PHYSICAL DIMENSIONS [J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1974, SC 9 (05) : 256 - 268

[6] FU SW, 1982, IEDM, P632

[7] KIMIZUKA M, UNPUB J VAC SCI

[8] CIRCUIT TECHNIQUES FOR A VLSI MEMORY [J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1983, 18 (05) : 463 - 470

[9] THE OXIDATION OF SHAPED SILICON SURFACES [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (06) : 1278 - 1282

[10] Matsuda T., 1982, International Electron Devices Meeting. Technical Digest, P407

[1] AMAZAWA T, 1983, 15TH C SOL STAT DEV, P229

[2] AMAZAWA T, 1984, 16TH C SOL STAT DEV

[3] ASAKAWA H, 1982, S VLSI TECH, P88

[4] CHWANG R, 1983, ISSCC, P56

[5] DESIGN OF ION-IMPLANTED MOSFETS WITH VERY SMALL PHYSICAL DIMENSIONS [J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1974, SC 9 (05) : 256 - 268

[6] FU SW, 1982, IEDM, P632

[7] KIMIZUKA M, UNPUB J VAC SCI

[8] CIRCUIT TECHNIQUES FOR A VLSI MEMORY [J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1983, 18 (05) : 463 - 470

[9] THE OXIDATION OF SHAPED SILICON SURFACES [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (06) : 1278 - 1282

[10] Matsuda T., 1982, International Electron Devices Meeting. Technical Digest, P407