MICROWAVE BIASED GAAS SUBMILLIMETER DETECTION SYSTEM

被引：4

作者：

CROWLEY, JD ^{[1
]}

WILSON, WL ^{[1
]}

TITTEL, FK ^{[1
]}

RABSON, TA ^{[1
]}

机构：

[1] RICE UNIV,DEPT ELECT ENGN,HOUSTON,TX 77001

来源：

INFRARED PHYSICS | 1976年 / 16卷 / 1-2期

关键词：

D O I：

10.1016/0020-0891(76)90038-5

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

引用

页码：225 / 232

页数：8

共 9 条

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[6]

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[7] FAR-INFRARED PHOTOCONDUCTIVITY IN HIGH-PURITY EPITAXIAL GAAS [J].

STILLMAN, GE ;

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[8]

STILLMAN GE, 1971, 3RD P INT C PHOT STA, P265

[9] PERFORMANCE OF BROAD-BAND MICROWAVE-BIASED EXTRINSIC PHOTOCONDUCTIVE DETECTORS AT 10.6 M [J].

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IEEE JOURNAL OF QUANTUM ELECTRONICS, 1970, QE 6 (07) :450-&

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