RECENT ADVANCES IN SILICON EPITAXY AND ITS APPLICATION TO HIGH-PERFORMANCE INTEGRATED-CIRCUITS

被引：13

作者：

SRINIVASAN, GR

机构：

来源：

JOURNAL OF CRYSTAL GROWTH | 1984年 / 70卷 / 1-2期

关键词：

D O I：

10.1016/0022-0248(84)90268-9

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：201 / 217

页数：17

共 79 条

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