FINITE-ELEMENT MODELING AND X-RAY-MEASUREMENT OF STRAIN IN PASSIVATED AL LINES DURING THERMAL CYCLING

被引:21
作者
BESSER, PR [1 ]
MACK, AS [1 ]
FRASER, DB [1 ]
BRAVMAN, JC [1 ]
机构
[1] INTEL CORP,COMPONENTS RES,SANTA CLARA,CA 95051
关键词
D O I
10.1149/1.2221639
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
Narrow-pitch encapsulated Al lines are used as interconnect metallization in integrated circuits. We have measured the principal strain state of Al alloy lines passivated with silicon nitride directly as a function of temperature. We compare these results with calculations of the strain state in these lines using finite-element modeling. The measured strain-temperature behavior shows good fundamental agreement with finite-element modeling, although the magnitude of the strains measured with x-rays is less than that predicted by modeling due to voiding in the lines.
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页码:1769 / 1772
页数:4
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