STUDY OF DEFECTS IN GAAS BY DIFFERENTIAL THERMAL-ANALYSIS

被引：7

作者：

LIM, HJ ^{[1
]}

VONBARDELEBEN, HJ ^{[1
]}

BOURGOIN, JC ^{[1
]}

机构：

[1] UNIV PARIS 07,ECOLE NORMALE SUPER,PHYS SOLIDES GRP,CNRS LAB,F-75251 PARIS 05,FRANCE

来源：

JOURNAL OF APPLIED PHYSICS | 1987年 / 62卷 / 07期

关键词：

D O I：

10.1063/1.339847

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2738 / 2741

页数：4

共 11 条

[1] ELECTRONIC-STRUCTURE, TOTAL ENERGIES, AND ABUNDANCES OF THE ELEMENTARY POINT-DEFECTS IN GAAS [J].

BARAFF, GA ;

SCHLUTER, M .

PHYSICAL REVIEW LETTERS, 1985, 55 (12) :1327-1330

[2]

Bourgoin J. C., 1985, Thirteenth International Conference on Defects in Semiconductors, P167

[3]

CULLIS AG, 1980, J APPL PHYS, V51, P2566

[4] VACANCY INTERACTIONS IN GAAS [J].

DANNEFAER, S ;

KERR, D .

JOURNAL OF APPLIED PHYSICS, 1986, 60 (02) :591-594

[5] NATURE OF DEFECTS IN N+ GALLIUM-ARSENIDE [J].

HUTCHINSON, PW ;

DOBSON, PS .

PHILOSOPHICAL MAGAZINE, 1974, 30 (01) :65-73

[6] IRRADIATION-INDUCED DEFECTS IN GAAS [J].

PONS, D ;

BOURGOIN, JC .

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1985, 18 (20) :3839-3871

[7] ENERGY-DEPENDENCE OF DEEP LEVEL INTRODUCTION IN ELECTRON-IRRADIATED GAAS [J].

PONS, D ;

MOONEY, PM ;

BOURGOIN, JC .

JOURNAL OF APPLIED PHYSICS, 1980, 51 (04) :2038-2042

[8]

PONS D, 1981, PHYS REV LETT, V47, P1283

[9] CREEP AND DISLOCATION VELOCITIES IN GALLIUM-ARSENIDE [J].

STEINHARDT, H ;

HAASEN, P .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1978, 49 (01) :93-101

[10] IRRADIATION-INDUCED DEFECTS IN PARA-TYPE GAAS [J].

STIEVENARD, D ;

BODDAERT, X ;

BOURGOIN, JC .

PHYSICAL REVIEW B, 1986, 34 (06) :4048-4058

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