THE STATISTICS OF RECOMBINATION VIA DANGLING BONDS IN AMORPHOUS-SILICON

被引：31

作者：

HALPERN, V

机构：

来源：

PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES | 1986年 / 54卷 / 06期

关键词：

D O I：

10.1080/13642818608236863

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：473 / 482

页数：10

共 10 条

[1] ELECTRON-TRANSPORT IN AMORPHOUS-SEMICONDUCTORS [J].

COHEN, MH ;

ECONOMOU, EN ;

SOUKOULIS, CM .

JOURNAL OF NON-CRYSTALLINE SOLIDS, 1984, 66 (1-2) :285-290

[2] HOPPING IN EXPONENTIAL BAND TAILS [J].

MONROE, D .

PHYSICAL REVIEW LETTERS, 1985, 54 (02) :146-149

[3] STEADY-STATE PHOTOCONDUCTIVITY IN AMORPHOUS-SEMICONDUCTORS CONTAINING CORRELATED DEFECTS [J].

OKAMOTO, H ;

KIDA, H ;

HAMAKAWA, Y .

PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1984, 49 (03) :231-247

[4]

Rose A., 1978, CONCEPTS PHOTOCONDUC, V2nd ed.

[5] CORRELATION-EFFECTS AND THE DENSITY OF STATES IN AMORPHOUS-SILICON [J].

SCHWEITZER, L ;

GRUNEWALD, M ;

DERSCH, H .

SOLID STATE COMMUNICATIONS, 1981, 39 (02) :355-358

[6] EQUILIBRIUM TRANSPORT IN AMORPHOUS-SEMICONDUCTORS [J].

SHAPIRO, FR ;

ADLER, D .

JOURNAL OF NON-CRYSTALLINE SOLIDS, 1985, 74 (2-3) :189-194

[7] DISORDER EFFECTS ON DEEP TRAPPING IN AMORPHOUS-SEMICONDUCTORS [J].

STREET, RA .

PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1984, 49 (01) :L15-L20

[8]

STREET RA, 1984, PHYS REV B, V30, P5791

[9] RADIATIVE RECOMBINATION AT DANGLING BONDS IN A-SI-H [J].

WILSON, BA ;

SERGENT, AM ;

HARBISON, JP .

PHYSICAL REVIEW B, 1984, 30 (04) :2282-2285

[10] FERMI ENERGY AND ELECTRONIC SPECIFIC-HEAT IN MOTT INSULATORS [J].

YOFFA, EJ ;

ADLER, D .

PHYSICAL REVIEW B, 1975, 12 (06) :2260-2264

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