ANALYSIS OF NON-EXPONENTIAL TRANSIENT CAPACITANCE IN SILICON DIODES HEAVILY DOPED WITH PLATINUM

被引：26

作者：

PHILLIPS, WE

LOWNEY, JR

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1983年 / 54卷 / 05期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1063/1.332309

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2786 / 2791

页数：6

共 12 条

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