ELECTROMIGRATION IN THIN ALUMINUM FILMS ON TITANIUM NITRIDE

被引:970
作者
BLECH, IA [1 ]
机构
[1] BELL TEL LABS INC,MURRAY HILL,NJ 07974
关键词
D O I
10.1063/1.322842
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:1203 / 1208
页数:6
相关论文
共 18 条
[11]  
CHHABRA D, 1967, TR22419 IBM REP
[12]   ELECTROMIGRATION AND FAILURE IN ELECTRONICS - INTRODUCTION [J].
DHEURLE, FM .
PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1971, 59 (10) :1409-&
[13]   CURRENT-INDUCED MARKER MOTION IN GOLD WIRES [J].
HUNTINGTON, HB ;
GRONE, AR .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1961, 20 (1-2) :76-87
[14]  
LEARN AJ, 1971, 9 P ANN IEEE REL PHY, P129
[15]   DIFFUSIVITY AND SOLUBILITY OF SI IN AL METALLIZATION OF INTEGRATED CIRCUITS [J].
MCCALDIN, JO ;
SANKUR, H .
APPLIED PHYSICS LETTERS, 1971, 19 (12) :524-&
[16]   VALUE D0Z' FOR GRAIN BOUNDARY ELECTROMIGRATION IN ALUMINUM FILMS [J].
ROSENBERG, R .
APPLIED PHYSICS LETTERS, 1970, 16 (01) :27-+
[17]   NUCLEATION OF VOIDS AND THEIR GROWTH DURING ELECTROMIGRATION [J].
SUHL, H ;
TURNER, PA .
JOURNAL OF APPLIED PHYSICS, 1973, 44 (11) :4891-4895