MAGNETORESISTANCE OSCILLATIONS IN A TWO-DIMENSIONAL ELECTRON-GAS INDUCED BY A SUBMICROMETER PERIODIC POTENTIAL

被引：472

作者：

WEISS, D ^{[1
]}

VONKLITZING, K ^{[1
]}

PLOOG, K ^{[1
]}

WEIMANN, G ^{[1
]}

机构：

[1] TECH UNIV MUNICH,WALTER SCHOTTKY INST,D-8046 GARCHING,FED REP GER

来源：

EUROPHYSICS LETTERS | 1989年 / 8卷 / 02期

关键词：

D O I：

10.1209/0295-5075/8/2/012

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：179 / 184

页数：6

共 7 条

[1] MAGNETIC DEPOPULATION OF 1D SUBBANDS IN A NARROW 2D ELECTRON-GAS IN A GAAS-ALGAAS HETEROJUNCTION [J].

BERGGREN, KF ;

THORNTON, TJ ;

NEWSON, DJ ;

PEPPER, M .

PHYSICAL REVIEW LETTERS, 1986, 57 (14) :1769-1772

[2] MAGNETIC-FIELD DEPENDENCE OF THE ULTRASONIC ATTENTUATION IN METALS [J].

COHEN, MH ;

HARRISON, MJ ;

HARRISON, WA .

PHYSICAL REVIEW, 1960, 117 (04) :937-952

[3] A PROPOSAL FOR DETERMINING THE FERMI SURFACE BY MAGNETO-ACOUSTIC RESONANCE [J].

PIPPARD, AB .

PHILOSOPHICAL MAGAZINE, 1957, 2 (21) :1147-1148

[4] TRANSIENT AND PERSISTENT PHOTOCONDUCTIVITY IN N-ALXGA1-XAS AND SELECTIVELY DOPED N-ALXGA1-XAS/GAAS HETEROSTRUCTURES [J].

SCHUBERT, EF ;

KNECHT, J ;

PLOOG, K .

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1985, 18 (09) :L215-L221

[5] SELECTIVELY DOPED N-ALXGA1-XAS/GAAS HETEROSTRUCTURES WITH HIGH-MOBILITY TWO-DIMENSIONAL ELECTRON-GAS FOR FIELD-EFFECT TRANSISTORS .1. EFFECT OF PARALLEL CONDUCTANCE [J].

SCHUBERT, EF ;

PLOOG, K ;

DAMBKES, H ;

HEIME, K .

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1984, 33 (02) :63-76

[6] SPATIALLY MODULATED PHOTOCONDUCTIVITY AT N-ALGAAS/GAAS HETEROJUNCTIONS AND FORMATION OF PERSISTENT CHARGE PATTERNS WITH SUB-MICRON DIMENSIONS [J].

TSUBAKI, K ;

SAKAKI, H ;

YOSHINO, J ;

SEKIGUCHI, Y .

APPLIED PHYSICS LETTERS, 1984, 45 (06) :663-665

[7] MAGNETIC DEPOPULATION OF SUBBANDS AND UNIVERSAL CONDUCTANCE FLUCTUATIONS IN QUASI-ONE-DIMENSIONAL GAAS-ALGAAS HETEROSTRUCTURES [J].

VANHOUTEN, H ;

VANWEES, BJ ;

MOOIJ, JE ;

ROOS, G ;

BERGGREN, KF .

SUPERLATTICES AND MICROSTRUCTURES, 1987, 3 (05) :497-501

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