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SURFACE-STATES ON GAAS(110)
被引:43
作者
:
ZHANG, SB
论文数:
0
引用数:
0
h-index:
0
ZHANG, SB
COHEN, ML
论文数:
0
引用数:
0
h-index:
0
COHEN, ML
机构
:
来源
:
SURFACE SCIENCE
|
1986年
/ 172卷
/ 03期
关键词
:
D O I
:
10.1016/0039-6028(86)90510-8
中图分类号
:
O64 [物理化学(理论化学)、化学物理学];
学科分类号
:
070304 ;
081704 ;
摘要
:
引用
收藏
页码:754 / 762
页数:9
相关论文
共 30 条
[1]
RELATIVISTIC AND CORE-RELAXATION EFFECTS ON THE ENERGY-BANDS OF GALLIUM-ARSENIDE AND GERMANIUM
BACHELET, GB
论文数:
0
引用数:
0
h-index:
0
机构:
MAX PLANCK INST FESTKORPERFORSCH, D-7000 STUTTGART 80, FED REP GER
MAX PLANCK INST FESTKORPERFORSCH, D-7000 STUTTGART 80, FED REP GER
BACHELET, GB
CHRISTENSEN, NE
论文数:
0
引用数:
0
h-index:
0
机构:
MAX PLANCK INST FESTKORPERFORSCH, D-7000 STUTTGART 80, FED REP GER
MAX PLANCK INST FESTKORPERFORSCH, D-7000 STUTTGART 80, FED REP GER
CHRISTENSEN, NE
[J].
PHYSICAL REVIEW B,
1985,
31
(02)
: 879
-
887
[2]
BOUND AND RESONANT (110) SURFACE ELECTRONIC STATES FOR GAAS, GAP AND GASB
BERES, RP
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV ILLINOIS,DEPT PHYS,URBANA,IL 61801
BERES, RP
ALLEN, RE
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV ILLINOIS,DEPT PHYS,URBANA,IL 61801
ALLEN, RE
DOW, JD
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV ILLINOIS,DEPT PHYS,URBANA,IL 61801
DOW, JD
[J].
SOLID STATE COMMUNICATIONS,
1983,
45
(01)
: 13
-
16
[3]
(110) SURFACE ATOMIC STRUCTURES OF COVALENT AND IONIC SEMICONDUCTORS
CHADI, DJ
论文数:
0
引用数:
0
h-index:
0
机构:
Xerox Palo Alto Research Center, Palo Alto, CA 94304
CHADI, DJ
[J].
PHYSICAL REVIEW B,
1979,
19
(04):
: 2074
-
2082
[4]
(110) SURFACE-STATES OF GAAS - SENSITIVITY OF ELECTRONIC-STRUCTURE TO SURFACE-STRUCTURE
CHADI, DJ
论文数:
0
引用数:
0
h-index:
0
CHADI, DJ
[J].
PHYSICAL REVIEW B,
1978,
18
(04)
: 1800
-
1812
[5]
RELAXATION EFFECTS ON (110) SURFACE OF GAAS
CHELIKOWSKY, JR
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV CALIF BERKELEY, DEPT PHYS, BERKELEY, CA 94720 USA
CHELIKOWSKY, JR
LOUIE, SG
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV CALIF BERKELEY, DEPT PHYS, BERKELEY, CA 94720 USA
LOUIE, SG
COHEN, ML
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV CALIF BERKELEY, DEPT PHYS, BERKELEY, CA 94720 USA
COHEN, ML
[J].
PHYSICAL REVIEW B,
1976,
14
(10)
: 4724
-
4726
[6]
ELECTRONIC STATES ON THE RELAXED (110) SURFACE OF GAAS
CHELIKOWSKY, JR
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV CALIF BERKELEY, DEPT PHYS, BERKELEY, CA 94720 USA
CHELIKOWSKY, JR
COHEN, ML
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV CALIF BERKELEY, DEPT PHYS, BERKELEY, CA 94720 USA
COHEN, ML
[J].
SOLID STATE COMMUNICATIONS,
1979,
29
(03)
: 267
-
271
[7]
THE ATOMIC GEOMETRY OF GAAS(110) REVISITED
DUKE, CB
论文数:
0
引用数:
0
h-index:
0
机构:
PRINCETON UNIV,DEPT ELECT ENGN & COMP SCI,PRINCETON,NJ 08544
PRINCETON UNIV,DEPT ELECT ENGN & COMP SCI,PRINCETON,NJ 08544
DUKE, CB
RICHARDSON, SL
论文数:
0
引用数:
0
h-index:
0
机构:
PRINCETON UNIV,DEPT ELECT ENGN & COMP SCI,PRINCETON,NJ 08544
PRINCETON UNIV,DEPT ELECT ENGN & COMP SCI,PRINCETON,NJ 08544
RICHARDSON, SL
PATON, A
论文数:
0
引用数:
0
h-index:
0
机构:
PRINCETON UNIV,DEPT ELECT ENGN & COMP SCI,PRINCETON,NJ 08544
PRINCETON UNIV,DEPT ELECT ENGN & COMP SCI,PRINCETON,NJ 08544
PATON, A
KAHN, A
论文数:
0
引用数:
0
h-index:
0
机构:
PRINCETON UNIV,DEPT ELECT ENGN & COMP SCI,PRINCETON,NJ 08544
PRINCETON UNIV,DEPT ELECT ENGN & COMP SCI,PRINCETON,NJ 08544
KAHN, A
[J].
SURFACE SCIENCE,
1983,
127
(02)
: L135
-
L143
[8]
APPLICATION OF HIGH-ENERGY ION CHANNELING TO GAAS(110), AU-GAAS(110) AND PD-GAAS(110)
GOSSMANN, HJ
论文数:
0
引用数:
0
h-index:
0
机构:
SUNY ALBANY,DEPT PHYS,ALBANY,NY 12222
GOSSMANN, HJ
GIBSON, WM
论文数:
0
引用数:
0
h-index:
0
机构:
SUNY ALBANY,DEPT PHYS,ALBANY,NY 12222
GIBSON, WM
[J].
SURFACE SCIENCE,
1984,
139
(01)
: 239
-
259
[9]
NORM-CONSERVING PSEUDOPOTENTIALS
HAMANN, DR
论文数:
0
引用数:
0
h-index:
0
机构:
Bell Laboratories
HAMANN, DR
SCHLUTER, M
论文数:
0
引用数:
0
h-index:
0
机构:
Bell Laboratories
SCHLUTER, M
CHIANG, C
论文数:
0
引用数:
0
h-index:
0
机构:
Bell Laboratories
CHIANG, C
[J].
PHYSICAL REVIEW LETTERS,
1979,
43
(20)
: 1494
-
1497
[10]
ANGLE-RESOLVED PHOTOEMISSION FROM GAAS (110) SURFACE-STATES
HUIJSER, A
论文数:
0
引用数:
0
h-index:
0
HUIJSER, A
VANLAAR, J
论文数:
0
引用数:
0
h-index:
0
VANLAAR, J
VANROOY, TL
论文数:
0
引用数:
0
h-index:
0
VANROOY, TL
[J].
PHYSICS LETTERS A,
1978,
65
(04)
: 337
-
339
←
1
2
3
→
共 30 条
[1]
RELATIVISTIC AND CORE-RELAXATION EFFECTS ON THE ENERGY-BANDS OF GALLIUM-ARSENIDE AND GERMANIUM
BACHELET, GB
论文数:
0
引用数:
0
h-index:
0
机构:
MAX PLANCK INST FESTKORPERFORSCH, D-7000 STUTTGART 80, FED REP GER
MAX PLANCK INST FESTKORPERFORSCH, D-7000 STUTTGART 80, FED REP GER
BACHELET, GB
CHRISTENSEN, NE
论文数:
0
引用数:
0
h-index:
0
机构:
MAX PLANCK INST FESTKORPERFORSCH, D-7000 STUTTGART 80, FED REP GER
MAX PLANCK INST FESTKORPERFORSCH, D-7000 STUTTGART 80, FED REP GER
CHRISTENSEN, NE
[J].
PHYSICAL REVIEW B,
1985,
31
(02)
: 879
-
887
[2]
BOUND AND RESONANT (110) SURFACE ELECTRONIC STATES FOR GAAS, GAP AND GASB
BERES, RP
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV ILLINOIS,DEPT PHYS,URBANA,IL 61801
BERES, RP
ALLEN, RE
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV ILLINOIS,DEPT PHYS,URBANA,IL 61801
ALLEN, RE
DOW, JD
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV ILLINOIS,DEPT PHYS,URBANA,IL 61801
DOW, JD
[J].
SOLID STATE COMMUNICATIONS,
1983,
45
(01)
: 13
-
16
[3]
(110) SURFACE ATOMIC STRUCTURES OF COVALENT AND IONIC SEMICONDUCTORS
CHADI, DJ
论文数:
0
引用数:
0
h-index:
0
机构:
Xerox Palo Alto Research Center, Palo Alto, CA 94304
CHADI, DJ
[J].
PHYSICAL REVIEW B,
1979,
19
(04):
: 2074
-
2082
[4]
(110) SURFACE-STATES OF GAAS - SENSITIVITY OF ELECTRONIC-STRUCTURE TO SURFACE-STRUCTURE
CHADI, DJ
论文数:
0
引用数:
0
h-index:
0
CHADI, DJ
[J].
PHYSICAL REVIEW B,
1978,
18
(04)
: 1800
-
1812
[5]
RELAXATION EFFECTS ON (110) SURFACE OF GAAS
CHELIKOWSKY, JR
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV CALIF BERKELEY, DEPT PHYS, BERKELEY, CA 94720 USA
CHELIKOWSKY, JR
LOUIE, SG
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV CALIF BERKELEY, DEPT PHYS, BERKELEY, CA 94720 USA
LOUIE, SG
COHEN, ML
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV CALIF BERKELEY, DEPT PHYS, BERKELEY, CA 94720 USA
COHEN, ML
[J].
PHYSICAL REVIEW B,
1976,
14
(10)
: 4724
-
4726
[6]
ELECTRONIC STATES ON THE RELAXED (110) SURFACE OF GAAS
CHELIKOWSKY, JR
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV CALIF BERKELEY, DEPT PHYS, BERKELEY, CA 94720 USA
CHELIKOWSKY, JR
COHEN, ML
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV CALIF BERKELEY, DEPT PHYS, BERKELEY, CA 94720 USA
COHEN, ML
[J].
SOLID STATE COMMUNICATIONS,
1979,
29
(03)
: 267
-
271
[7]
THE ATOMIC GEOMETRY OF GAAS(110) REVISITED
DUKE, CB
论文数:
0
引用数:
0
h-index:
0
机构:
PRINCETON UNIV,DEPT ELECT ENGN & COMP SCI,PRINCETON,NJ 08544
PRINCETON UNIV,DEPT ELECT ENGN & COMP SCI,PRINCETON,NJ 08544
DUKE, CB
RICHARDSON, SL
论文数:
0
引用数:
0
h-index:
0
机构:
PRINCETON UNIV,DEPT ELECT ENGN & COMP SCI,PRINCETON,NJ 08544
PRINCETON UNIV,DEPT ELECT ENGN & COMP SCI,PRINCETON,NJ 08544
RICHARDSON, SL
PATON, A
论文数:
0
引用数:
0
h-index:
0
机构:
PRINCETON UNIV,DEPT ELECT ENGN & COMP SCI,PRINCETON,NJ 08544
PRINCETON UNIV,DEPT ELECT ENGN & COMP SCI,PRINCETON,NJ 08544
PATON, A
KAHN, A
论文数:
0
引用数:
0
h-index:
0
机构:
PRINCETON UNIV,DEPT ELECT ENGN & COMP SCI,PRINCETON,NJ 08544
PRINCETON UNIV,DEPT ELECT ENGN & COMP SCI,PRINCETON,NJ 08544
KAHN, A
[J].
SURFACE SCIENCE,
1983,
127
(02)
: L135
-
L143
[8]
APPLICATION OF HIGH-ENERGY ION CHANNELING TO GAAS(110), AU-GAAS(110) AND PD-GAAS(110)
GOSSMANN, HJ
论文数:
0
引用数:
0
h-index:
0
机构:
SUNY ALBANY,DEPT PHYS,ALBANY,NY 12222
GOSSMANN, HJ
GIBSON, WM
论文数:
0
引用数:
0
h-index:
0
机构:
SUNY ALBANY,DEPT PHYS,ALBANY,NY 12222
GIBSON, WM
[J].
SURFACE SCIENCE,
1984,
139
(01)
: 239
-
259
[9]
NORM-CONSERVING PSEUDOPOTENTIALS
HAMANN, DR
论文数:
0
引用数:
0
h-index:
0
机构:
Bell Laboratories
HAMANN, DR
SCHLUTER, M
论文数:
0
引用数:
0
h-index:
0
机构:
Bell Laboratories
SCHLUTER, M
CHIANG, C
论文数:
0
引用数:
0
h-index:
0
机构:
Bell Laboratories
CHIANG, C
[J].
PHYSICAL REVIEW LETTERS,
1979,
43
(20)
: 1494
-
1497
[10]
ANGLE-RESOLVED PHOTOEMISSION FROM GAAS (110) SURFACE-STATES
HUIJSER, A
论文数:
0
引用数:
0
h-index:
0
HUIJSER, A
VANLAAR, J
论文数:
0
引用数:
0
h-index:
0
VANLAAR, J
VANROOY, TL
论文数:
0
引用数:
0
h-index:
0
VANROOY, TL
[J].
PHYSICS LETTERS A,
1978,
65
(04)
: 337
-
339
←
1
2
3
→