SOME ASPECTS OF ION-BEAM INDUCED METAL-SILICON REACTIONS

被引:2
作者
COLLIGON, JS
KHEYRANDISH, H
STEPHENS, GA
机构
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1987年 / 5卷 / 04期
关键词
D O I
10.1116/1.574609
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
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页码:1417 / 1417
页数:1
相关论文
共 8 条
[1]   ION-BEAM MIXING AT NICKEL-SILICON INTERFACES [J].
AVERBACK, RS ;
THOMPSON, LJ ;
MOYLE, J ;
SCHALIT, M .
JOURNAL OF APPLIED PHYSICS, 1982, 53 (03) :1342-1349
[2]   COBALT SILICIDE FORMATION BY ION MIXING [J].
HAMDI, AH ;
NICOLET, MA .
THIN SOLID FILMS, 1984, 119 (04) :357-363
[3]  
LAU SS, 1983, NUCL INSTRUM METHODS, V209, P87
[4]   CR+ ION IRRADIATION AND THERMAL ANNEALING OF CHROMIUM FILMS ON SILICON FOR FORMATION OF SILICIDES [J].
LI, WZ ;
KHEYRANDISH, H ;
ALTAMIMI, Z ;
GRANT, WA .
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1987, 19-20 :723-730
[5]   ION-BEAM-INDUCED REACTIONS IN METAL-SEMICONDUCTOR AND METAL-METAL THIN-FILM STRUCTURES [J].
MAYER, JW ;
TSAUR, BY ;
LAU, SS ;
HUNG, LS .
NUCLEAR INSTRUMENTS & METHODS, 1981, 182 (APR) :1-13
[6]   THEORETICAL ASPECTS OF ATOMIC MIXING BY ION-BEAMS [J].
SIGMUND, P ;
GRASMARTI, A .
NUCLEAR INSTRUMENTS & METHODS, 1981, 182 (APR) :25-41
[7]  
1983, VLSI ELECTRONICS MIC, V8
[8]  
1983, VLSI ELECTRONICS MIC, V6