CR+ ION IRRADIATION AND THERMAL ANNEALING OF CHROMIUM FILMS ON SILICON FOR FORMATION OF SILICIDES

被引：10

作者：

LI, WZ ^{[1
]}

KHEYRANDISH, H ^{[1
]}

ALTAMIMI, Z ^{[1
]}

GRANT, WA ^{[1
]}

机构：

[1] UNIV SALFORD, DEPT ELECTR & ELECT ENGN, SALFORD M5 4WT, LANCS, ENGLAND

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1987年 / 19-20卷

关键词：

D O I：

10.1016/S0168-583X(87)80145-3

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

引用

页码：723 / 730

页数：8

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[10]

LI WZ, IN PRESS RAD EFF

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