LOCAL ROUGHNESS AND SURFACE-STATES ON SI(001) - ANALYSIS OF VACUUM ANNEALINGS AND OXYGEN-ADSORPTION DESORPTION PROCESSES

被引：15

作者：

SEBENNE, CA

LACHARME, JP

ANDRIAMANANTENASOA, I

KHIAL, M

机构：

[1] Laboratoire de Physique des Solides, associé au CNRS n 154, Université P. et M. Curie

来源：

APPLIED SURFACE SCIENCE | 1989年 / 41-2卷

关键词：

D O I：

10.1016/0169-4332(89)90084-6

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The clean (001) face of silicon has been studied as a function of surface preparation both prior to and after ultra-high vacuum immersion, using photoemission yield spectroscopy assisted by LEED and AES characterization. It was found that (i) the density of surface defects differs strongly as a function of preparation, (ii) this density can be significantly changed by proper UHV treatments, and (iii) the density of surface states at the Fermi level EF as well as the surface position of EF in the gap depend strongly on the degree of roughness. © 1989.

引用

页码：352 / 356

页数：5

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