共 20 条
- [1] DEFORMATIONS OF THE SURFACE-STATE BAND OF CLEAN SI(001) SURFACES DUE TO ROUGHENING AND MISORIENTATION[J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1987, 2 (03) : 145 - 150ANDRIAMANANTENASOA, ILACHARME, JPSEBENNE, CAPROIX, F
- [2] STRUCTURAL AND ELECTRONIC-PROPERTIES OF CLEAVED SI(111) UPON ROOM-TEMPERATURE FORMATION OF AN INTERFACE WITH AG[J]. PHYSICAL REVIEW B, 1981, 24 (08): : 4552 - 4559BOLMONT, DCHEN, PSEBENNE, CAPROIX, F
- [3] ANGLE-RESOLVED PHOTOEMISSION FROM SI(100) - DIRECT VERSUS INDIRECT TRANSITIONS[J]. SURFACE SCIENCE, 1986, 169 (2-3) : 438 - 450GOLDMANN, AKOKE, PMONCH, WWOLFGARTEN, GPOLLMANN, J
- [4] STRUCTURE DEPENDENT OXIDATION OF CLEAN SI(111) SURFACES[J]. SURFACE SCIENCE, 1976, 58 (02) : 374 - 378GUICHAR, GMSEBENNE, CAGARRY, GABALKANSKI, M
- [5] OXYGEN-CHEMISORPTION AND OXIDE FORMATION ON SI(111) AND SI(100) SURFACES[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1983, 1 (02): : 640 - 645HOLLINGER, GHIMPSEL, FJ
- [6] RELATIONS BETWEEN ELECTRONIC PROPERTIES OF CLEAN SURFACES AND ACTIVATED ADSORPTION[J]. SURFACE SCIENCE, 1975, 53 (DEC) : 444 - 460IBACH, H
- [7] ADSORPTION OF OXYGEN ON SILICON (111) SURFACES .1.[J]. SURFACE SCIENCE, 1973, 38 (02) : 433 - 454IBACH, HHORN, KDORN, RLUTH, H
- [8] OXYGEN ON CLEAVED SILICON (111) - EFFECTS OF ATOMIC STEPS AND RESIDUAL GASES[J]. SURFACE SCIENCE, 1980, 92 (2-3) : 407 - 416KASUPKE, NHENZLER, M
- [9] SI-O BOND FORMATION ON THE SI(100)-2X1 SURFACE AT THE EARLY STAGE OF OXIDATION AS OBSERVED BY AES[J]. SURFACE SCIENCE, 1984, 148 (2-3) : L641 - L644KEIM, EG
- [10] ADSORPTION OF ATOMIC OXYGEN (N2O) ON A CLEAN SI(100) SURFACE AND ITS INFLUENCE ON THE SURFACE-STATE DENSITY - A COMPARISON WITH O-2[J]. SURFACE SCIENCE, 1987, 180 (2-3) : 565 - 598KEIM, EGWOLTERBEEK, LVANSILFHOUT, A