ON THE POSSIBILITY OF MBE GROWTH INTERFACE MODIFICATION BY HYDROGEN

被引：28

作者：

BACHRACH, RZ ^{[1
]}

BRINGANS, RD ^{[1
]}

机构：

[1] STANFORD UNIV,SYNCHROTRON RADIAT LAB,STANFORD,CA 94305

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1983年 / 1卷 / 02期

关键词：

D O I：

10.1116/1.582517

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：142 / 145

页数：4

共 22 条

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[6]

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[7] ELECTRONIC-STRUCTURE OF GE(111) AND GE(111)-H FROM ANGLE-RESOLVED PHOTOEMISSION MEASUREMENTS [J].

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[8]

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[9]

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