THEORY OF METAL-INSULATOR-SEMICONDUCTOR SOLAR-CELLS

[1] Anderson W. A., 1975, 1975 International Electron Devices Meeting. (Technical digest), P217, DOI 10.1109/IEDM.1975.188863

[2] IV CHARACTERISTICS FOR SILICON SCHOTTKY SOLAR CELLS [J]. PROCEEDINGS OF THE IEEE, 1975, 63 (01) : 206 - 208

[3] BRANDHORST H, 1975, P INT ELECTRON DEVIC, P331

[4] BRANDHORST H, 1975, TMX71771 NASA PUBL, P13

[5] CHARLSON EJ, 1975, J APPL PHYS, V46, P9

[6] NON-EQUILIBRIUM EFFECTS ON METAL-OXIDE-SEMICONDUCTOR TUNNEL CURRENTS [J]. SOLID-STATE ELECTRONICS, 1971, 14 (10) : 957 - &

[7] DEAL BE, 1967, J ELECTROCHEM SOC, V114, P226

[8] ROLE OF INTERFACIAL LAYER IN METAL-SEMICONDUCTOR SOLAR CELLS [J]. JOURNAL OF APPLIED PHYSICS, 1975, 46 (03) : 1286 - 1289

[9] FONASH SJ, 1975, 11TH P PHOT SPEC C

[10] CURRENT MULTIPLICATION IN METAL-INSULATOR-SEMICONDUCTOR (MIS) TUNNEL-DIODES [J]. SOLID-STATE ELECTRONICS, 1974, 17 (04) : 349 - 365

[1] Anderson W. A., 1975, 1975 International Electron Devices Meeting. (Technical digest), P217, DOI 10.1109/IEDM.1975.188863

[2] IV CHARACTERISTICS FOR SILICON SCHOTTKY SOLAR CELLS [J]. PROCEEDINGS OF THE IEEE, 1975, 63 (01) : 206 - 208

[3] BRANDHORST H, 1975, P INT ELECTRON DEVIC, P331

[4] BRANDHORST H, 1975, TMX71771 NASA PUBL, P13

[5] CHARLSON EJ, 1975, J APPL PHYS, V46, P9

[6] NON-EQUILIBRIUM EFFECTS ON METAL-OXIDE-SEMICONDUCTOR TUNNEL CURRENTS [J]. SOLID-STATE ELECTRONICS, 1971, 14 (10) : 957 - &

[7] DEAL BE, 1967, J ELECTROCHEM SOC, V114, P226

[8] ROLE OF INTERFACIAL LAYER IN METAL-SEMICONDUCTOR SOLAR CELLS [J]. JOURNAL OF APPLIED PHYSICS, 1975, 46 (03) : 1286 - 1289

[9] FONASH SJ, 1975, 11TH P PHOT SPEC C

[10] CURRENT MULTIPLICATION IN METAL-INSULATOR-SEMICONDUCTOR (MIS) TUNNEL-DIODES [J]. SOLID-STATE ELECTRONICS, 1974, 17 (04) : 349 - 365