PHOTOCONDUCTIVITY IN CUINSE2 FILMS

被引：33

作者：

PAL, R ^{[1
]}

CHATTOPADHYAY, KK ^{[1
]}

CHAUDHURI, S ^{[1
]}

PAL, AK ^{[1
]}

机构：

[1] INDIAN ASSOC CULTIVAT SCI,DEPT MAT SCI,CALCUTTA 700032,W BENGAL,INDIA

来源：

SOLAR ENERGY MATERIALS AND SOLAR CELLS | 1994年 / 33卷 / 02期

关键词：

D O I：

10.1016/0927-0248(94)90210-0

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

CulnSe2 films with different Cu/In ratios (0.4-1.2) were deposited on glass substrates by three source evaporation techniques. The films were polycrystalline in nature with partially depleted grains. Photoconductivity in the films was measured in the temperature range 170-370 K. The data at low temperatures (T < 300 K) were analyzed by using the grain boundary trapping model with monovalent trapping states. The intercrystalline barrier height in dark varied within 0.13 and 0.08 eV with the variation of Cu/In within 0.4 and 1.18. The variation of the barrier height with the intensity of the incident photons in the range 10-75 mW/cm2 was analyzed to understand the carrier detrapping effect in the films under various illumination levels.

引用

页码：241 / 251

页数：11

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