ELECTRON-HOLE PAIR CREATION AND METAL-SEMICONDUCTOR INTERFACE SCATTERING OBSERVED BY BALLISTIC-ELECTRON-EMISSION MICROSCOPY

被引：28

作者：

LEE, EY ^{[1
]}

SCHOWALTER, LJ ^{[1
]}

机构：

[1] RENSSELAER POLYTECH INST, CTR INTEGRATED ELECTR, TROY, NY 12180 USA

来源：

PHYSICAL REVIEW B | 1992年 / 45卷 / 11期

关键词：

D O I：

10.1103/PhysRevB.45.6325

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Ballistic-electron-emission microscopy (BEEM) is used to demonstrate experimentally that the creation of electron-hole pairs near the metal/semiconductor (M/S) interface significantly affects the scattering of the ballistic electrons with energy greater than the semiconductor-substrate energy gap. In addition, we observe that the derivative BEEM spectrum of Au/Si(001) (n-type) is rich with features which may correspond to either M/S interface states or to states in the semiconductor band gap near the interface. We suggest that these interface scattering processes occur also for other M/S systems.

引用

页码：6325 / 6328

页数：4

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