HIGH-SPEED PHOTODETECTOR APPLICATIONS OF GAAS AND INXGA1-XAS/GAAS GROWN BY LOW-TEMPERATURE MOLECULAR-BEAM EPITAXY

被引：17

作者：

GUPTA, S ^{[1
]}

WHITAKER, JF ^{[1
]}

WILLIAMSON, SL ^{[1
]}

MOUROU, GA ^{[1
]}

LESTER, L ^{[1
]}

HWANG, KC ^{[1
]}

HO, P ^{[1
]}

MAZUROWSKI, J ^{[1
]}

BALLINGALL, JM ^{[1
]}

机构：

[1] GE CO,ELECTR LAB,SYRACUSE,NY 13221

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1993年 / 22卷 / 12期

关键词：

LT-GAAS; LT-INGAAS; PHOTODETECTOR;

D O I：

10.1007/BF02649997

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

GaAs grown by molecular beam epitaxy (MBE) at low substrate temperatures (similar to 200 degrees C) exhibits the desired properties of a high-speed photoconductor: high resistivity, high mobility, high dielectric-breakdown strength, and subpicosecond carrier lifetime. The unique material properties are related to the excess arsenic content in the MBE grown epilayers. Due to the combination of the above properties, dramatically improved performance has been observed in photoconductive detectors and correlators using submicron spaced electrodes. In addition to GaAs, low-temperature growth of InxGa1-xAs alloys also leads to the incorporation of excess arsenic in the layers, and therefore this material system exhibits many beneficial photoconductor properties as well. In particular, the lattice-mismatched growth of LT-InxGa1-xAs on GaAs appears to be the most suited for high-speed detector applications in the near-infrared wavelength range used in optical communications. The material issues and the photodetector characteristics required to optimize their performance are discussed.

引用

页码：1449 / 1455

页数：7

共 20 条

[1] 375-GHZ-BANDWIDTH PHOTOCONDUCTIVE DETECTOR [J].