MORPHOLOGICAL STRUCTURE OF BISMUTH-DOPED N-TYPE AMORPHOUS-GERMANIUM SULFIDE SEMICONDUCTORS

被引：9

作者：

BHATIA, KL ^{[1
]}

GOSAIN, DP ^{[1
]}

PARTHASARATHY, G ^{[1
]}

GOPAL, ESR ^{[1
]}

机构：

[1] INDIAN INST SCI,INSTRUMENTAT & SERV UNIT,BANGALORE 560012,KARNATAKA,INDIA

来源：

JOURNAL OF MATERIALS SCIENCE LETTERS | 1986年 / 5卷 / 12期

关键词：

D O I：

10.1007/BF01729393

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：1281 / 1284

页数：4

共 14 条

[1] STRUCTURAL-PROPERTIES OF DOPED NORMAL-TYPE AMORPHOUS (GESE3.5)100-XBIX [J].

BHATIA, KL ;

GOSAIN, DP ;

PARTHASARASTHY, G ;

GOPAL, EST ;

SHARMA, AK .

JOURNAL OF MATERIALS SCIENCE LETTERS, 1986, 5 (02) :181-182

[2]

BHATIA KL, 1983, J NON-CRYST SOLIDS, V58, P151

[3] PRESSURE-INDUCED EFFECTS IN BULK AMORPHOUS N-TYPE SEMICONDUCTORS (GESE3.5)100-XBIX [J].

BHATIA, KL ;

PARTHASARATHY, G ;

GOPAL, ESR .

JOURNAL OF NON-CRYSTALLINE SOLIDS, 1985, 69 (2-3) :189-202

[4] STUDY OF EFFECTS OF DOPANTS ON STRUCTURE OF VITREOUS SEMICONDUCTORS (GESE3.5)100-XMX (M = BI, SB) USING HIGH-PRESSURE TECHNIQUES [J].

BHATIA, KL ;

PARTHASARATHY, G ;

GOPAL, ESR ;

SHARMA, AK .

SOLID STATE COMMUNICATIONS, 1984, 51 (09) :739-742

[5] ROLE OF DOPANTS IN PRESSURE-INDUCED EFFECTS IN GLASSY GESE3.5 CONTAINING BI AND SB [J].

BHATIA, KL ;

PARTHASARATHY, G ;

GOSAIN, DP ;

GOPAL, ESR .

PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1985, 51 (06) :L63-L68

[6] ELECTRICAL TRANSPORT IN BI DOPED N-TYPE AMORPHOUS-SEMICONDUCTORS (GESE3.5)100-XBIX AT HIGH-PRESSURE [J].

BHATIA, KL ;

PARTHASARATHY, G ;

GOPAL, ESR .

JOURNAL OF NON-CRYSTALLINE SOLIDS, 1983, 59-6 (DEC) :1019-1021

[7]

BHATIA KL, 1986, PHYS REV B

[8]

BHATIA KL, 1983, J NONCRYST SOLIDS, V54, P17

[9]

BHATIA KL, 1986, J NONCRYST SOLIDS

[10] EFFECT OF CHARGED ADDITIVES ON CARRIER CONCENTRATIONS IN LONE-PAIR SEMICONDUCTORS [J].

FRITZSCHE, H ;

KASTNER, M .

PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1978, 37 (03) :285-292

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