STUDIES OF EFFECTIVE GETTERING TECHNIQUES USING SEGREGATION ANNEALING FOR COMPLEMENTARY METAL-OXIDE-SEMICONDUCTOR TECHNOLOGIES

被引：6

作者：

GREGOR, RW ^{[1
]}

STINEBAUGH, WH ^{[1
]}

机构：

[1] AT&T BELL LABS,MURRAY HILL,NJ 07974

来源：

JOURNAL OF APPLIED PHYSICS | 1988年 / 64卷 / 04期

关键词：

D O I：

10.1063/1.341716

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2079 / 2086

页数：8

共 22 条

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[9] METAL PRECIPITATES IN SILICON P-N JUNCTIONS [J].

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