LOW THRESHOLD 1.3-MU-M STRAINED-LAYER ALXGAYIN1-X-YAS QUANTUM-WELL LASERS

被引：22

作者：

ZAH, CE ^{[1
]}

BHAT, R ^{[1
]}

FAVIRE, FJ ^{[1
]}

KOZA, M ^{[1
]}

LEE, TP ^{[1
]}

DARBY, D ^{[1
]}

FLANDERS, DC ^{[1
]}

HSIEH, JJ ^{[1
]}

机构：

[1] LASERTRON INC,BURLINGTON,MA 01803

来源：

ELECTRONICS LETTERS | 1992年 / 28卷 / 25期

关键词：

LASERS; SEMICONDUCTOR LASERS;

D O I：

10.1049/el:19921495

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Low threshold 1-3 mum lasers using compressive- as well as tensile-strained single AlxGayIn1-x-yAs quantum wells (100 and 188 A/cm2, respectively), are demonstrated. Low threshold currents of 2 mA at 25-degrees-C and 14 mA at 100-degrees-C are achieved for 3-5 mum wide ridge waveguide lasers using the compressive-strained single quantum well.

引用

页码：2323 / 2325

页数：3

共 8 条

[1] BHAT R, 1992, 4TH INT C INP REL MA
[2] VERY LOW THRESHOLD CURRENT-DENSITY 1.5 MU-M GAINAS/ALGAINAS GRADED-INDEX SEPARATE-CONFINEMENT-HETEROSTRUCTURE STRAINED QUANTUM-WELL LASER-DIODES GROWN BY ORGANOMETALLIC CHEMICAL VAPOR-DEPOSITION
KASUKAWA, A
BHAT, R
ZAH, CE
KOZA, MA
LEE, TP
[J]. APPLIED PHYSICS LETTERS, 1991, 59 (20) : 2486 - 2488
[3] MCILROY PWA, 1985, IEEE J QUANTUM ELECT, V21, P1958, DOI 10.1109/JQE.1985.1072606
[4] TANBUNEK T, 1992, FEB TECH DIG OFC 92, P39
[5] THIJS PJA, 1991, 17TH TECH DIG ECOC P, V3, P31
[6] THIJS PJA, 1991, 17TH TECH DIG ECOC P, V2, P48
[7] ALINGAAS/ALGAAS SEPARATE-CONFINEMENT HETEROSTRUCTURE STRAINED SINGLE QUANTUM-WELL DIODE-LASERS GROWN BY ORGANOMETALLIC VAPOR-PHASE EPITAXY
WANG, CA
WALPOLE, JN
MISSAGGIA, LJ
DONNELLY, JP
CHOI, HK
[J]. APPLIED PHYSICS LETTERS, 1991, 58 (20) : 2208 - 2210
[8] LOW THRESHOLD 1.5-MU-M TENSILE-STRAINED SINGLE QUANTUM-WELL LASERS
ZAH, CE
BHAT, R
PATHAK, B
CANEAU, C
FAVIRE, FJ
ANDREADAKIS, NC
HWANG, DM
KOZA, MA
CHEN, CY
LEE, TP
[J]. ELECTRONICS LETTERS, 1991, 27 (16) : 1414 - 1416

← 1 →