INITIAL-STAGES OF EPITAXIAL SEMICONDUCTOR-INSULATOR HETEROINTERFACE FORMATION

被引：26

作者：

OLMSTEAD, MA ^{[1
]}

BRINGANS, RD ^{[1
]}

机构：

[1] XEROX CORP,PALO ALTO RES CTR,PALO ALTO,CA 94304

来源：

JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA | 1990年 / 51卷

基金：

美国国家科学基金会;

关键词：

D O I：

10.1016/0368-2048(90)80184-C

中图分类号：

O433 [光谱学];

学科分类号：

0703 ; 070302 ;

摘要：

The current understanding of the interface formed as CaF2 is grown epitaxially on Si(111) is reviewed. Photoemission studies of the growth of strontium fluoride on Si(111) and the growth of Ge on CaF2-on-Si(111) substrates are compared with these findings. The large change in fluoride lattice constant between CaF2 and SrF2 is found not to affect the interface bonding, indicating the dominance of chemical factors. The growth of Ge on CaF2-on-Si(111) structures is found to be enhanced by electron irradiation of the substrate, which is related to the semiconductor-cation bonding found at the CaF2-on-Si(111) and SrF2-on-Si(111) interfaces. © 1990.

引用

页码：599 / 612

页数：14

共 50 条

[1] EPITAXIAL RELATIONS IN GROUP-IIA FLUORIDE SI(111) HETEROSTRUCTURES
ASANO, T
ISHIWARA, H
[J]. APPLIED PHYSICS LETTERS, 1983, 42 (06) : 517 - 519
[2] FORMATION OF GAAS-ON-INSULATOR STRUCTURES ON SI SUBSTRATES BY HETEROEPITAXIAL GROWTH OF CAF2 AND GAAS
ASANO, T
ISHIWARA, H
LEE, HC
TSUTSUI, K
FURUKAWA, S
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1986, 25 (02): : L139 - L141
[3] EPITAXIAL-GROWTH OF SI FILMS ON CAF2/SI STRUCTURES WITH THIN SI LAYERS PREDEPOSITED AT ROOM-TEMPERATURE
ASANO, T
ISHIWARA, H
[J]. JOURNAL OF APPLIED PHYSICS, 1984, 55 (10) : 3566 - 3570
[4] STRUCTURAL CHARACTERIZATION OF THE SI(111)-CAF2 INTERFACE BY HIGH-RESOLUTION TRANSMISSION ELECTRON-MICROSCOPY - REPLY
BATSTONE, JL
PHILLIPS, JM
[J]. PHYSICAL REVIEW LETTERS, 1988, 61 (19) : 2275 - 2275
[5] EVIDENCE FOR THE INFLUENCE OF INTERFACIAL ATOMIC-STRUCTURE ON ELECTRICAL-PROPERTIES AT THE EPITAXIAL CAF2/SI(111) INTERFACE
BATSTONE, JL
PHILLIPS, JM
HUNKE, EC
[J]. PHYSICAL REVIEW LETTERS, 1988, 60 (14) : 1394 - 1397
[6] HETEROEPITAXY OF INSULATOR METAL SILICON STRUCTURES - CAF2/NISI2/SI(111) AND CAF2/COSI2/SI(111)
FATHAUER, RW
HUNT, BD
SCHOWALTER, LJ
OKAMOTO, M
HASHIMOTO, S
[J]. APPLIED PHYSICS LETTERS, 1986, 49 (02) : 64 - 66
[7] ELECTRON-ESCAPE DEPTHS IN GERMANIUM
GANT, H
MONCH, W
[J]. SURFACE SCIENCE, 1981, 105 (01) : 217 - 224
[8] ANALYSIS OF EPITAXIAL FLUORIDE-SEMICONDUCTOR INTERFACES
GIBSON, JM
PHILLIPS, JM
[J]. APPLIED PHYSICS LETTERS, 1983, 43 (09) : 828 - 830
[9] DIRECT MEASUREMENTS OF THE SURFACE ENERGIES OF CRYSTALS
GILMAN, JJ
[J]. JOURNAL OF APPLIED PHYSICS, 1960, 31 (12) : 2208 - 2218
[10] HEINZ TF, IN PRESS PHYS REV

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