SURFACE-ENERGY-DRIVEN SECONDARY GRAIN-GROWTH IN THIN AU FILMS

被引:114
作者
WONG, CC [1 ]
SMITH, HI [1 ]
THOMPSON, CV [1 ]
机构
[1] MIT,DEPT ELECT ENGN & COMP SCI,CAMBRIDGE,MA 02139
关键词
CRYSTALS - Growth - MICROSCOPIC EXAMINATION - Transmission Electron Microscopy;
D O I
10.1063/1.96543
中图分类号
O59 [应用物理学];
学科分类号
摘要
Secondary grain growth in thin Au films on SiO//2 substrates is reported. Secondary grains have left brace 111 right brace texture which minimizes the surface energy. This indicates that surface energy anisotropy provides selectivity in the driving force for growth of secondary grains. In thin Au films on SiO//2, surface-energy-driven secondary grain growth occurs at room temperature as soon as a film becomes continuous. This mode of grain growth is, most likely, responsible for the development of the frequently observed left brace 111 right brace deposition texture in thin Au films.
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页码:335 / 337
页数:3
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