PASSIVATION OF GAAS-SURFACES AND ALGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS USING SULFIDE SOLUTIONS AND SINX OVERLAYER

被引：21

作者：

KAPILA, A ^{[1
]}

MALHOTRA, V ^{[1
]}

CAMNITZ, LH ^{[1
]}

SEAWARD, KL ^{[1
]}

MARS, D ^{[1
]}

机构：

[1] HEWLETT PACKARD LABS,PALO ALTO,CA 94304

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1995年 / 13卷 / 01期

关键词：

D O I：

10.1116/1.588001

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Stable passivation of GaAs surfaces and AlGaAs/GaAs heterojunction bipolar transistors has been achieved using sulfide solutions and SiNx overlayers. The SiNx layers are deposited at approx.200 °C using electron cyclotron resonance plasma-enhanced chemical vapor deposition technique. The capacitance-voltage measurements indicate a substantial reduction in the density of electronic defects at the SiNx/S-GaAs interface as a result of annealing in N2 ambient. The base current of a 36 × 36 μm2 AlGaAs/GaAs heterojunction bipolar transistor is reduced by approximately two orders of magnitude in the low collector current regime by using sulfide treatment, SiNx deposition, and anneal. Both the Al/SiNx/S-GaAs capacitors and transistors are stable for several months with no noticeable degradation in their electrical characteristics.

引用

页码：10 / 14

页数：5

共 11 条

[1] SURFACE PASSIVATION EFFECTS OF AS2S3 GLASS ON SELF-ALIGNED ALGAAS-GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS [J].