PASSIVATION OF (NH4)2S-TREATED GAAS SURFACE WITH AN AS2S3 FILM

被引：21

作者：

MADA, Y

WADA, K

WADA, Y

机构：

[1] NTT LSI Laboratories, Atsugi-shi, Kanagawa 243-01

来源：

APPLIED PHYSICS LETTERS | 1992年 / 61卷 / 25期

关键词：

D O I：

10.1063/1.108013

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

This letter describes the suppression of (NH4)2S-treated GaAs surface degradation by coating the treated surface with an evaporated As2S3 film. The photoluminescence intensity of the treated GaAs surface shows no decrease even after 100 days. The properties of the As2S3/GaAs interface were also evaluated by metal-insulator-semiconductor techniques. A small hysteresis capacitance-voltage curve with reduced frequency dispersion was obtained, which indicates low interface state density. The passivation of the (NH4)2S-treated surface by coating with an As2S3 film is very promising for GaAs surface electronic property improvements.

引用

页码：2993 / 2995

页数：3

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