LOCATION OF ATOMS IN THE 1ST MONOLAYER OF GAAS ON SI

被引：51

作者：

PATEL, JR

FREELAND, PE

HYBERTSEN, MS

JACOBSON, DC

GOLOVCHENKO, JA

机构：

[1] HARVARD UNIV,DIV APPL PHYS,CAMBRIDGE,MA 02139

[2] HARVARD UNIV,DEPT PHYS,CAMBRIDGE,MA 02139

来源：

PHYSICAL REVIEW LETTERS | 1987年 / 59卷 / 19期

关键词：

D O I：

10.1103/PhysRevLett.59.2180

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：2180 / 2183

页数：4

共 15 条

[1] NEW APPLICATIONS OF X-RAY STANDING-WAVE FIELDS TO SOLID-STATE PHYSICS [J].

ANDERSEN, SK ;

GOLOVCHENKO, JA ;

MAIR, G .

PHYSICAL REVIEW LETTERS, 1976, 37 (17) :1141-1145

[2] VAPOR PRESSURES AND PHASE EQUILIBRIA IN GA-AS SYSTEM [J].

ARTHUR, JR .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1967, 28 (11) :2257-&

[3] EFFECT OF DYNAMICAL DIFFRACTION IN X-RAY FLUORESCENCE SCATTERING [J].

BATTERMAN, BW .

PHYSICAL REVIEW A-GENERAL PHYSICS, 1964, 133 (3A) :A759-&

[4]

Bringans R. D., 1987, 18th International Conference on the Physics of Semiconductors, P191

[5] MODEL SEMICONDUCTOR SURFACES - ARSENIC TERMINATION OF THE GE(111), SI(111) AND SI(100) SURFACES [J].

BRINGANS, RD ;

UHRBERG, RIG ;

OLMSTEAD, MA ;

BACHRACH, RZ ;

NORTHRUP, JE .

PHYSICA SCRIPTA, 1987, T17 :7-12

[6] ARSENIC-TERMINATED GE(111) - AN IDEAL 1 X 1 SURFACE [J].

BRINGANS, RD ;

UHRBERG, RIG ;

BACHRACH, RZ ;

NORTHRUP, JE .

PHYSICAL REVIEW LETTERS, 1985, 55 (05) :533-536

[7] X-RAY STANDING WAVES AT CRYSTAL-SURFACES [J].

COWAN, PL ;

GOLOVCHENKO, JA ;

ROBBINS, MF .

PHYSICAL REVIEW LETTERS, 1980, 44 (25) :1680-1683

[8] SOLUTION TO THE SURFACE REGISTRATION PROBLEM USING X-RAY STANDING WAVES [J].

GOLOVCHENKO, JA ;

PATEL, JR ;

KAPLAN, DR ;

COWAN, PL ;

BEDZYK, MJ .

PHYSICAL REVIEW LETTERS, 1982, 49 (08) :560-563

[9]

ISHIZAKA A, 1982, 2ND P INT S MOL BEAM, P183

[10]

KROEMER H, 1986, MATER RES SOC S P, V67, P3

← 1 2 →