OPTICAL STUDIES OF EXCITONS IN GA0.47IN0.53AS/INP MULTIPLE QUANTUM-WELLS

被引：22

作者：

WESTLAND, DJ ^{[1
]}

FOX, AM ^{[1
]}

MACIEL, AC ^{[1
]}

RYAN, JF ^{[1
]}

SCOTT, MD ^{[1
]}

DAVIES, JI ^{[1
]}

RIFFAT, JR ^{[1
]}

机构：

[1] PLESSEY CO LTD,ALLEN CLARK RES CTR,TOWCHESTER NN12 8EQ,NORTHANTS,ENGLAND

来源：

APPLIED PHYSICS LETTERS | 1987年 / 50卷 / 13期

关键词：

D O I：

10.1063/1.98007

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：839 / 841

页数：3

共 16 条

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[6] PHOTOLUMINESCENCE FROM IN0.53GA0.47AS/INP QUANTUM WELLS GROWN BY MOLECULAR-BEAM EPITAXY [J].

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APPLIED PHYSICS LETTERS, 1985, 46 (12) :1161-1163

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[9] GROWTH OF GA0.47IN0.53AS-INP QUANTUM WELLS BY LOW-PRESSURE METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].

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VOOS, M .

APPLIED PHYSICS LETTERS, 1983, 43 (06) :585-587

[10] OPTICAL-PROPERTIES OF INGAAS-INP SINGLE QUANTUM-WELLS GROWN BY ATMOSPHERIC-PRESSURE METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].

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APPLIED PHYSICS LETTERS, 1986, 48 (21) :1455-1457

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