MECHANISMS OF POLYMERIZATION IN DISCHARGES OF FLUOROCARBONS

[1] SOME CHEMICAL ASPECTS OF THE FLUOROCARBON PLASMA ETCHING OF SILICON AND ITS COMPOUNDS [J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1979, 23 (01) : 33 - 41

[2] OPTICAL-EMISSION SPECTROSCOPY OF REACTIVE PLASMAS - A METHOD FOR CORRELATING EMISSION INTENSITIES TO REACTIVE PARTICLE DENSITY [J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (06) : 3134 - 3136

[3] d'Agostino R., 1983, XVI International Conference on Phenomena in Ionized Gases (Invited Papers), P251

[4] d'Agostino R., 1984, Plasma Chemistry and Plasma Processing, V4, P165, DOI 10.1007/BF00566839

[5] SPECTROSCOPIC DIAGNOSTICS OF CF4-O2 PLASMAS DURING SI AND SIO2 ETCHING PROCESSES [J]. JOURNAL OF APPLIED PHYSICS, 1981, 52 (03) : 1259 - 1265

[6] Flamm D.L., 1981, PLASMA CHEM PLASMA P, V1, P317

[7] Gottscho R. A., 1983, Plasma Chemistry and Plasma Processing, V3, P193, DOI 10.1007/BF00566020

[8] KAY E, 1980, TOP CURR CHEM, V3, P1

[9] A KINETIC-STUDY OF THE PLASMA-ETCHING PROCESS .2. PROBE MEASUREMENTS OF ELECTRON PROPERTIES IN AN RF PLASMA-ETCHING REACTOR [J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (04) : 2939 - 2946

[1] SOME CHEMICAL ASPECTS OF THE FLUOROCARBON PLASMA ETCHING OF SILICON AND ITS COMPOUNDS [J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1979, 23 (01) : 33 - 41

[2] OPTICAL-EMISSION SPECTROSCOPY OF REACTIVE PLASMAS - A METHOD FOR CORRELATING EMISSION INTENSITIES TO REACTIVE PARTICLE DENSITY [J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (06) : 3134 - 3136

[3] d'Agostino R., 1983, XVI International Conference on Phenomena in Ionized Gases (Invited Papers), P251

[4] d'Agostino R., 1984, Plasma Chemistry and Plasma Processing, V4, P165, DOI 10.1007/BF00566839

[5] SPECTROSCOPIC DIAGNOSTICS OF CF4-O2 PLASMAS DURING SI AND SIO2 ETCHING PROCESSES [J]. JOURNAL OF APPLIED PHYSICS, 1981, 52 (03) : 1259 - 1265

[6] Flamm D.L., 1981, PLASMA CHEM PLASMA P, V1, P317

[7] Gottscho R. A., 1983, Plasma Chemistry and Plasma Processing, V3, P193, DOI 10.1007/BF00566020

[8] KAY E, 1980, TOP CURR CHEM, V3, P1

[9] A KINETIC-STUDY OF THE PLASMA-ETCHING PROCESS .2. PROBE MEASUREMENTS OF ELECTRON PROPERTIES IN AN RF PLASMA-ETCHING REACTOR [J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (04) : 2939 - 2946