SILICON DETECTORS FOR CHARGED-PARTICLES MANUFACTURED BY CONVENTIONAL PLANAR TECHNOLOGY

被引：10

作者：

SUEVA, D

SPASSOV, V

CHIKOV, N

VAPIREV, EI

IVANOV, I

机构：

[1] RES INST TIEPE 2,BU-1738 SOFIA,BULGARIA

[2] BULGARIAN ACAD SCI,INST NUCL RES & NUCL ENERGY,BU-1784 SOFIA,BULGARIA

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1993年 / 40卷 / 03期

关键词：

D O I：

10.1109/23.221047

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Two types of detectors were developed by conventional planar technology: a p+ - n - n+ ion-implanted detector and a n+ - p - p+ diffused detector. Both detectors were investigated for alpha- and beta-spectroscopy and with an additional deposition of a (LiF)-Li-6 converter layer the detectors were tested for detection of neutrons.

引用

收藏

页码：257 / 261

页数：5

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