CHEMICAL VAPOR-DEPOSITION ON SILICON - INSITU SURFACE STUDIES

被引：72

作者：

FOORD, JS

JACKMAN, RB

机构：

来源：

CHEMICAL PHYSICS LETTERS | 1984年 / 112卷 / 02期

关键词：

D O I：

10.1016/0009-2614(84)85020-4

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

页码：190 / 194

页数：5

共 22 条

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ALLEN, SD .

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[3]

[Anonymous], 1981, CHEM 2 DIMENSIONS SU

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BLACK, JG ;

DUKE, CB ;

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THOMAS, HR .

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[5]

BRODEN G, 1977, APPL PHYS, V13, P333, DOI 10.1007/BF00882607

[6] FORMATION OF SILICON-NITRIDE STRUCTURES BY DIRECT ELECTRON-BEAM WRITING [J].

CHIN, BH ;

EHRLICH, G .

APPLIED PHYSICS LETTERS, 1981, 38 (04) :253-255

[7] FORMATION OF THIN POLYMER FILMS BY ELECTRON BOMBARDMENT [J].

CHRISTY, RW .

JOURNAL OF APPLIED PHYSICS, 1960, 31 (09) :1680-1683

[8] LASER-INDUCED GAS-SURFACE INTERACTIONS [J].

Chuang, T. J. .

SURFACE SCIENCE REPORTS, 1983, 3 (01) :1-105

[9]

DAVIS LE, 1976, HDB AUGER ELECTRON S

[10]

EHRLICH DJ, 1981, J ELECTROCHEM SOC, V128, P2039, DOI 10.1149/1.2127793

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