INTERNAL PHOTOEMISSION-STUDIES OF ARTIFICIAL BAND DISCONTINUITIES AT BURIED GAAS(100) GAAS(100) HOMOJUNCTIONS

被引：15

作者：

DELLORTO, T

ALMEIDA, J

COLUZZA, C

BALDERESCHI, A

MARGARITONDO, G

CANTILE, M

YILDIRIM, S

SORBA, L

FRANCIOSI, A

机构：

[1] LAB TASC,I-34012 TRIESTE,ITALY

[2] UNIV MINNESOTA,DEPT CHEM ENGN & MAT SCI,MINNEAPOLIS,MN 55455

[3] UNIV TRIESTE,DIPARTIMENTO FIS,I-34127 TRIESTE,ITALY

来源：

APPLIED PHYSICS LETTERS | 1994年 / 64卷 / 16期

关键词：

D O I：

10.1063/1.111699

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Internal photoemission phototransport measurements revealed 0.27+/-0.04 eV conduction- and valence-band discontinuities induced by a Si intralayer at p-GaAs(100)/n-GaAs(100) homojunctions. The interface dipole originating from the heterovalent character of the Si-GaAs bonds raises the bands of the GaAs overlayer above that of the GaAs subtrate.

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页码：2111 / 2113

页数：3

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