EFFECT OF IONIZED DONORS ON THE ELECTRON AND HOLE DENSITIES OF STATES IN SILICON

被引：7

作者：

LOWNEY, JR

BENNETT, HS

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1983年 / 54卷 / 03期

关键词：

D O I：

10.1063/1.332159

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1369 / 1374

页数：6

共 18 条

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