MEASUREMENT OF RECOMBINATION LIFETIME PROFILES IN EPILAYERS USING A CONDUCTIVITY MODULATION TECHNIQUE

被引：8

作者：

SPIRITO, P

COCORULLO, G

机构：

[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

[2] CNR,IST RIC ELETROMAGNETISMO & COMPONENTI ELETTR,NAPLES,ITALY

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1985年 / 32卷 / 09期

关键词：

D O I：

10.1109/T-ED.1985.22184

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1708 / 1713

页数：6

共 9 条

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[5]

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[6] MEASUREMENT OF DIFFUSION LENGTH, LIFETIME, AND SURFACE RECOMBINATION VELOCITY IN THIN SEMICONDUCTOR LAYERS [J].

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NEUGROSCHEL, A .

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[7] THE EFFECT OF BUILT-IN DRIFT FIELD AND EMITTER RECOMBINATIONS ON FCVD OF A P-N-JUNCTION DIODE [J].

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