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INTERPRETATION OF APPARENT CHEMICAL-SHIFTS IN XP SPECTRA FROM OXIDE GAP INTERFACES
被引:13
作者
:
MIZOKAWA, Y
论文数:
0
引用数:
0
h-index:
0
机构:
OSAKA UNIV, INST SCI & IND RES, IBARAKI, OSAKA 567, JAPAN
OSAKA UNIV, INST SCI & IND RES, IBARAKI, OSAKA 567, JAPAN
MIZOKAWA, Y
[
1
]
KOMODA, O
论文数:
0
引用数:
0
h-index:
0
机构:
OSAKA UNIV, INST SCI & IND RES, IBARAKI, OSAKA 567, JAPAN
OSAKA UNIV, INST SCI & IND RES, IBARAKI, OSAKA 567, JAPAN
KOMODA, O
[
1
]
IWASAKI, H
论文数:
0
引用数:
0
h-index:
0
机构:
OSAKA UNIV, INST SCI & IND RES, IBARAKI, OSAKA 567, JAPAN
OSAKA UNIV, INST SCI & IND RES, IBARAKI, OSAKA 567, JAPAN
IWASAKI, H
[
1
]
SHEN, DH
论文数:
0
引用数:
0
h-index:
0
机构:
OSAKA UNIV, INST SCI & IND RES, IBARAKI, OSAKA 567, JAPAN
OSAKA UNIV, INST SCI & IND RES, IBARAKI, OSAKA 567, JAPAN
SHEN, DH
[
1
]
NAKAMURA, S
论文数:
0
引用数:
0
h-index:
0
机构:
OSAKA UNIV, INST SCI & IND RES, IBARAKI, OSAKA 567, JAPAN
OSAKA UNIV, INST SCI & IND RES, IBARAKI, OSAKA 567, JAPAN
NAKAMURA, S
[
1
]
机构
:
[1]
OSAKA UNIV, INST SCI & IND RES, IBARAKI, OSAKA 567, JAPAN
来源
:
JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA
|
1983年
/ 31卷
/ 04期
关键词
:
D O I
:
10.1016/0368-2048(83)85081-6
中图分类号
:
O433 [光谱学];
学科分类号
:
0703 ;
070302 ;
摘要
:
引用
收藏
页码:335 / 354
页数:20
相关论文
共 35 条
[21]
QUANTITATIVE CHEMICAL DEPTH PROFILES OF ANODIC OXIDE ON GAAS OBTAINED BY X-RAY PHOTOELECTRON-SPECTROSCOPY
[J].
MIZOKAWA, Y
论文数:
0
引用数:
0
h-index:
0
机构:
OSAKA UNIV,INST SCI & IND RES,SUITA,OSAKA 565,JAPAN
OSAKA UNIV,INST SCI & IND RES,SUITA,OSAKA 565,JAPAN
MIZOKAWA, Y
;
IWASAKI, H
论文数:
0
引用数:
0
h-index:
0
机构:
OSAKA UNIV,INST SCI & IND RES,SUITA,OSAKA 565,JAPAN
OSAKA UNIV,INST SCI & IND RES,SUITA,OSAKA 565,JAPAN
IWASAKI, H
;
NISHITANI, R
论文数:
0
引用数:
0
h-index:
0
机构:
OSAKA UNIV,INST SCI & IND RES,SUITA,OSAKA 565,JAPAN
OSAKA UNIV,INST SCI & IND RES,SUITA,OSAKA 565,JAPAN
NISHITANI, R
;
NAKAMURA, S
论文数:
0
引用数:
0
h-index:
0
机构:
OSAKA UNIV,INST SCI & IND RES,SUITA,OSAKA 565,JAPAN
OSAKA UNIV,INST SCI & IND RES,SUITA,OSAKA 565,JAPAN
NAKAMURA, S
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1979,
126
(08)
:1370
-1374
[22]
ESCA STUDIES OF GA, AS, GAAS, GA2O3, AS2O3 AND AS2O5
[J].
MIZOKAWA, Y
论文数:
0
引用数:
0
h-index:
0
机构:
OSAKA UNIV,INST SCI & IND RES,SUITA,OSAKA 565,JAPAN
OSAKA UNIV,INST SCI & IND RES,SUITA,OSAKA 565,JAPAN
MIZOKAWA, Y
;
IWASAKI, H
论文数:
0
引用数:
0
h-index:
0
机构:
OSAKA UNIV,INST SCI & IND RES,SUITA,OSAKA 565,JAPAN
OSAKA UNIV,INST SCI & IND RES,SUITA,OSAKA 565,JAPAN
IWASAKI, H
;
NISHITANI, R
论文数:
0
引用数:
0
h-index:
0
机构:
OSAKA UNIV,INST SCI & IND RES,SUITA,OSAKA 565,JAPAN
OSAKA UNIV,INST SCI & IND RES,SUITA,OSAKA 565,JAPAN
NISHITANI, R
;
NAKAMURA, S
论文数:
0
引用数:
0
h-index:
0
机构:
OSAKA UNIV,INST SCI & IND RES,SUITA,OSAKA 565,JAPAN
OSAKA UNIV,INST SCI & IND RES,SUITA,OSAKA 565,JAPAN
NAKAMURA, S
.
JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA,
1978,
14
(02)
:129
-141
[23]
IN-DEPTH PROFILES OF OXIDE-FILMS ON GAAS STUDIED BY XPS
[J].
MIZOKAWA, Y
论文数:
0
引用数:
0
h-index:
0
机构:
OSAKA UNIV,INST SCI & IND RES,SUITA,OSAKA 565,JAPAN
OSAKA UNIV,INST SCI & IND RES,SUITA,OSAKA 565,JAPAN
MIZOKAWA, Y
;
IWASAKI, H
论文数:
0
引用数:
0
h-index:
0
机构:
OSAKA UNIV,INST SCI & IND RES,SUITA,OSAKA 565,JAPAN
OSAKA UNIV,INST SCI & IND RES,SUITA,OSAKA 565,JAPAN
IWASAKI, H
;
NISHITANI, R
论文数:
0
引用数:
0
h-index:
0
机构:
OSAKA UNIV,INST SCI & IND RES,SUITA,OSAKA 565,JAPAN
OSAKA UNIV,INST SCI & IND RES,SUITA,OSAKA 565,JAPAN
NISHITANI, R
;
NAKAMURA, S
论文数:
0
引用数:
0
h-index:
0
机构:
OSAKA UNIV,INST SCI & IND RES,SUITA,OSAKA 565,JAPAN
OSAKA UNIV,INST SCI & IND RES,SUITA,OSAKA 565,JAPAN
NAKAMURA, S
.
JAPANESE JOURNAL OF APPLIED PHYSICS,
1978,
17
:327
-333
[24]
Mizokawa Y., 1982, Oyo Buturi, V51, P831
[25]
A CONSIDERATION OF THE CHEMICAL-SHIFT IN ESCA SPECTRA FROM OXIDE-SEMICONDUCTOR INTERFACE
[J].
MIZOKAWA, Y
论文数:
0
引用数:
0
h-index:
0
机构:
OSAKA UNIV,INST SCI & IND RES,SUITA,OSAKA 565,JAPAN
OSAKA UNIV,INST SCI & IND RES,SUITA,OSAKA 565,JAPAN
MIZOKAWA, Y
;
IWASAKI, H
论文数:
0
引用数:
0
h-index:
0
机构:
OSAKA UNIV,INST SCI & IND RES,SUITA,OSAKA 565,JAPAN
OSAKA UNIV,INST SCI & IND RES,SUITA,OSAKA 565,JAPAN
IWASAKI, H
;
NAKAMURA, S
论文数:
0
引用数:
0
h-index:
0
机构:
OSAKA UNIV,INST SCI & IND RES,SUITA,OSAKA 565,JAPAN
OSAKA UNIV,INST SCI & IND RES,SUITA,OSAKA 565,JAPAN
NAKAMURA, S
.
JAPANESE JOURNAL OF APPLIED PHYSICS,
1981,
20
(07)
:L491
-L494
[26]
MIZOKAWA Y, UNPUB
[27]
XPS ANALYSIS OF THERMALLY GROWN OXIDE FILM ON GAP
[J].
NISHITANI, R
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV OSAKA PREFECTURE,JR COLL ENGN,IKUNO,OSAKA,JAPAN
UNIV OSAKA PREFECTURE,JR COLL ENGN,IKUNO,OSAKA,JAPAN
NISHITANI, R
;
IWASAKI, H
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV OSAKA PREFECTURE,JR COLL ENGN,IKUNO,OSAKA,JAPAN
UNIV OSAKA PREFECTURE,JR COLL ENGN,IKUNO,OSAKA,JAPAN
IWASAKI, H
;
MIZOKAWA, Y
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV OSAKA PREFECTURE,JR COLL ENGN,IKUNO,OSAKA,JAPAN
UNIV OSAKA PREFECTURE,JR COLL ENGN,IKUNO,OSAKA,JAPAN
MIZOKAWA, Y
;
论文数:
引用数:
h-index:
机构:
NAKAMURA, S
.
JAPANESE JOURNAL OF APPLIED PHYSICS,
1978,
17
(02)
:321
-327
[28]
OXIDATION OF GAP AND GAAS
[J].
RUBENSTEIN, M
论文数:
0
引用数:
0
h-index:
0
RUBENSTEIN, M
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1966,
113
(06)
:540
-+
[29]
INTERFACIAL REACTIONS IN PLASMA-GROWN NATIVE OXIDE-GAAS STRUCTURES
[J].
SCHWARTZ, GP
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV TOKYO,DEPT ELECTR ENGN,TOKYO 113,JAPAN
UNIV TOKYO,DEPT ELECTR ENGN,TOKYO 113,JAPAN
SCHWARTZ, GP
;
SCHWARTZ, B
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV TOKYO,DEPT ELECTR ENGN,TOKYO 113,JAPAN
UNIV TOKYO,DEPT ELECTR ENGN,TOKYO 113,JAPAN
SCHWARTZ, B
;
GRIFFITHS, JE
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV TOKYO,DEPT ELECTR ENGN,TOKYO 113,JAPAN
UNIV TOKYO,DEPT ELECTR ENGN,TOKYO 113,JAPAN
GRIFFITHS, JE
;
SUGANO, T
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV TOKYO,DEPT ELECTR ENGN,TOKYO 113,JAPAN
UNIV TOKYO,DEPT ELECTR ENGN,TOKYO 113,JAPAN
SUGANO, T
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1980,
127
(10)
:2269
-2273
[30]
X-RAY PHOTOELECTRON-SPECTROSCOPY STUDY OF NATIVE OXIDES ON GAAS
[J].
SCHWARTZ, GP
论文数:
0
引用数:
0
h-index:
0
机构:
Bell Laboratories, Murray Hill
SCHWARTZ, GP
;
GUALTIERI, GJ
论文数:
0
引用数:
0
h-index:
0
机构:
Bell Laboratories, Murray Hill
GUALTIERI, GJ
;
KAMMLOTT, GW
论文数:
0
引用数:
0
h-index:
0
机构:
Bell Laboratories, Murray Hill
KAMMLOTT, GW
;
SCHWARTZ, B
论文数:
0
引用数:
0
h-index:
0
机构:
Bell Laboratories, Murray Hill
SCHWARTZ, B
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1979,
126
(10)
:1737
-1749
←
1
2
3
4
→
共 35 条
[21]
QUANTITATIVE CHEMICAL DEPTH PROFILES OF ANODIC OXIDE ON GAAS OBTAINED BY X-RAY PHOTOELECTRON-SPECTROSCOPY
[J].
MIZOKAWA, Y
论文数:
0
引用数:
0
h-index:
0
机构:
OSAKA UNIV,INST SCI & IND RES,SUITA,OSAKA 565,JAPAN
OSAKA UNIV,INST SCI & IND RES,SUITA,OSAKA 565,JAPAN
MIZOKAWA, Y
;
IWASAKI, H
论文数:
0
引用数:
0
h-index:
0
机构:
OSAKA UNIV,INST SCI & IND RES,SUITA,OSAKA 565,JAPAN
OSAKA UNIV,INST SCI & IND RES,SUITA,OSAKA 565,JAPAN
IWASAKI, H
;
NISHITANI, R
论文数:
0
引用数:
0
h-index:
0
机构:
OSAKA UNIV,INST SCI & IND RES,SUITA,OSAKA 565,JAPAN
OSAKA UNIV,INST SCI & IND RES,SUITA,OSAKA 565,JAPAN
NISHITANI, R
;
NAKAMURA, S
论文数:
0
引用数:
0
h-index:
0
机构:
OSAKA UNIV,INST SCI & IND RES,SUITA,OSAKA 565,JAPAN
OSAKA UNIV,INST SCI & IND RES,SUITA,OSAKA 565,JAPAN
NAKAMURA, S
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1979,
126
(08)
:1370
-1374
[22]
ESCA STUDIES OF GA, AS, GAAS, GA2O3, AS2O3 AND AS2O5
[J].
MIZOKAWA, Y
论文数:
0
引用数:
0
h-index:
0
机构:
OSAKA UNIV,INST SCI & IND RES,SUITA,OSAKA 565,JAPAN
OSAKA UNIV,INST SCI & IND RES,SUITA,OSAKA 565,JAPAN
MIZOKAWA, Y
;
IWASAKI, H
论文数:
0
引用数:
0
h-index:
0
机构:
OSAKA UNIV,INST SCI & IND RES,SUITA,OSAKA 565,JAPAN
OSAKA UNIV,INST SCI & IND RES,SUITA,OSAKA 565,JAPAN
IWASAKI, H
;
NISHITANI, R
论文数:
0
引用数:
0
h-index:
0
机构:
OSAKA UNIV,INST SCI & IND RES,SUITA,OSAKA 565,JAPAN
OSAKA UNIV,INST SCI & IND RES,SUITA,OSAKA 565,JAPAN
NISHITANI, R
;
NAKAMURA, S
论文数:
0
引用数:
0
h-index:
0
机构:
OSAKA UNIV,INST SCI & IND RES,SUITA,OSAKA 565,JAPAN
OSAKA UNIV,INST SCI & IND RES,SUITA,OSAKA 565,JAPAN
NAKAMURA, S
.
JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA,
1978,
14
(02)
:129
-141
[23]
IN-DEPTH PROFILES OF OXIDE-FILMS ON GAAS STUDIED BY XPS
[J].
MIZOKAWA, Y
论文数:
0
引用数:
0
h-index:
0
机构:
OSAKA UNIV,INST SCI & IND RES,SUITA,OSAKA 565,JAPAN
OSAKA UNIV,INST SCI & IND RES,SUITA,OSAKA 565,JAPAN
MIZOKAWA, Y
;
IWASAKI, H
论文数:
0
引用数:
0
h-index:
0
机构:
OSAKA UNIV,INST SCI & IND RES,SUITA,OSAKA 565,JAPAN
OSAKA UNIV,INST SCI & IND RES,SUITA,OSAKA 565,JAPAN
IWASAKI, H
;
NISHITANI, R
论文数:
0
引用数:
0
h-index:
0
机构:
OSAKA UNIV,INST SCI & IND RES,SUITA,OSAKA 565,JAPAN
OSAKA UNIV,INST SCI & IND RES,SUITA,OSAKA 565,JAPAN
NISHITANI, R
;
NAKAMURA, S
论文数:
0
引用数:
0
h-index:
0
机构:
OSAKA UNIV,INST SCI & IND RES,SUITA,OSAKA 565,JAPAN
OSAKA UNIV,INST SCI & IND RES,SUITA,OSAKA 565,JAPAN
NAKAMURA, S
.
JAPANESE JOURNAL OF APPLIED PHYSICS,
1978,
17
:327
-333
[24]
Mizokawa Y., 1982, Oyo Buturi, V51, P831
[25]
A CONSIDERATION OF THE CHEMICAL-SHIFT IN ESCA SPECTRA FROM OXIDE-SEMICONDUCTOR INTERFACE
[J].
MIZOKAWA, Y
论文数:
0
引用数:
0
h-index:
0
机构:
OSAKA UNIV,INST SCI & IND RES,SUITA,OSAKA 565,JAPAN
OSAKA UNIV,INST SCI & IND RES,SUITA,OSAKA 565,JAPAN
MIZOKAWA, Y
;
IWASAKI, H
论文数:
0
引用数:
0
h-index:
0
机构:
OSAKA UNIV,INST SCI & IND RES,SUITA,OSAKA 565,JAPAN
OSAKA UNIV,INST SCI & IND RES,SUITA,OSAKA 565,JAPAN
IWASAKI, H
;
NAKAMURA, S
论文数:
0
引用数:
0
h-index:
0
机构:
OSAKA UNIV,INST SCI & IND RES,SUITA,OSAKA 565,JAPAN
OSAKA UNIV,INST SCI & IND RES,SUITA,OSAKA 565,JAPAN
NAKAMURA, S
.
JAPANESE JOURNAL OF APPLIED PHYSICS,
1981,
20
(07)
:L491
-L494
[26]
MIZOKAWA Y, UNPUB
[27]
XPS ANALYSIS OF THERMALLY GROWN OXIDE FILM ON GAP
[J].
NISHITANI, R
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV OSAKA PREFECTURE,JR COLL ENGN,IKUNO,OSAKA,JAPAN
UNIV OSAKA PREFECTURE,JR COLL ENGN,IKUNO,OSAKA,JAPAN
NISHITANI, R
;
IWASAKI, H
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV OSAKA PREFECTURE,JR COLL ENGN,IKUNO,OSAKA,JAPAN
UNIV OSAKA PREFECTURE,JR COLL ENGN,IKUNO,OSAKA,JAPAN
IWASAKI, H
;
MIZOKAWA, Y
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV OSAKA PREFECTURE,JR COLL ENGN,IKUNO,OSAKA,JAPAN
UNIV OSAKA PREFECTURE,JR COLL ENGN,IKUNO,OSAKA,JAPAN
MIZOKAWA, Y
;
论文数:
引用数:
h-index:
机构:
NAKAMURA, S
.
JAPANESE JOURNAL OF APPLIED PHYSICS,
1978,
17
(02)
:321
-327
[28]
OXIDATION OF GAP AND GAAS
[J].
RUBENSTEIN, M
论文数:
0
引用数:
0
h-index:
0
RUBENSTEIN, M
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1966,
113
(06)
:540
-+
[29]
INTERFACIAL REACTIONS IN PLASMA-GROWN NATIVE OXIDE-GAAS STRUCTURES
[J].
SCHWARTZ, GP
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV TOKYO,DEPT ELECTR ENGN,TOKYO 113,JAPAN
UNIV TOKYO,DEPT ELECTR ENGN,TOKYO 113,JAPAN
SCHWARTZ, GP
;
SCHWARTZ, B
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV TOKYO,DEPT ELECTR ENGN,TOKYO 113,JAPAN
UNIV TOKYO,DEPT ELECTR ENGN,TOKYO 113,JAPAN
SCHWARTZ, B
;
GRIFFITHS, JE
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV TOKYO,DEPT ELECTR ENGN,TOKYO 113,JAPAN
UNIV TOKYO,DEPT ELECTR ENGN,TOKYO 113,JAPAN
GRIFFITHS, JE
;
SUGANO, T
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV TOKYO,DEPT ELECTR ENGN,TOKYO 113,JAPAN
UNIV TOKYO,DEPT ELECTR ENGN,TOKYO 113,JAPAN
SUGANO, T
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1980,
127
(10)
:2269
-2273
[30]
X-RAY PHOTOELECTRON-SPECTROSCOPY STUDY OF NATIVE OXIDES ON GAAS
[J].
SCHWARTZ, GP
论文数:
0
引用数:
0
h-index:
0
机构:
Bell Laboratories, Murray Hill
SCHWARTZ, GP
;
GUALTIERI, GJ
论文数:
0
引用数:
0
h-index:
0
机构:
Bell Laboratories, Murray Hill
GUALTIERI, GJ
;
KAMMLOTT, GW
论文数:
0
引用数:
0
h-index:
0
机构:
Bell Laboratories, Murray Hill
KAMMLOTT, GW
;
SCHWARTZ, B
论文数:
0
引用数:
0
h-index:
0
机构:
Bell Laboratories, Murray Hill
SCHWARTZ, B
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1979,
126
(10)
:1737
-1749
←
1
2
3
4
→