INTERPRETATION OF APPARENT CHEMICAL-SHIFTS IN XP SPECTRA FROM OXIDE GAP INTERFACES

被引:13
作者
MIZOKAWA, Y [1 ]
KOMODA, O [1 ]
IWASAKI, H [1 ]
SHEN, DH [1 ]
NAKAMURA, S [1 ]
机构
[1] OSAKA UNIV, INST SCI & IND RES, IBARAKI, OSAKA 567, JAPAN
关键词
D O I
10.1016/0368-2048(83)85081-6
中图分类号
O433 [光谱学];
学科分类号
0703 ; 070302 ;
摘要
引用
收藏
页码:335 / 354
页数:20
相关论文
共 35 条
[21]   QUANTITATIVE CHEMICAL DEPTH PROFILES OF ANODIC OXIDE ON GAAS OBTAINED BY X-RAY PHOTOELECTRON-SPECTROSCOPY [J].
MIZOKAWA, Y ;
IWASAKI, H ;
NISHITANI, R ;
NAKAMURA, S .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (08) :1370-1374
[22]   ESCA STUDIES OF GA, AS, GAAS, GA2O3, AS2O3 AND AS2O5 [J].
MIZOKAWA, Y ;
IWASAKI, H ;
NISHITANI, R ;
NAKAMURA, S .
JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA, 1978, 14 (02) :129-141
[23]   IN-DEPTH PROFILES OF OXIDE-FILMS ON GAAS STUDIED BY XPS [J].
MIZOKAWA, Y ;
IWASAKI, H ;
NISHITANI, R ;
NAKAMURA, S .
JAPANESE JOURNAL OF APPLIED PHYSICS, 1978, 17 :327-333
[24]  
Mizokawa Y., 1982, Oyo Buturi, V51, P831
[25]   A CONSIDERATION OF THE CHEMICAL-SHIFT IN ESCA SPECTRA FROM OXIDE-SEMICONDUCTOR INTERFACE [J].
MIZOKAWA, Y ;
IWASAKI, H ;
NAKAMURA, S .
JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (07) :L491-L494
[26]  
MIZOKAWA Y, UNPUB
[27]   XPS ANALYSIS OF THERMALLY GROWN OXIDE FILM ON GAP [J].
NISHITANI, R ;
IWASAKI, H ;
MIZOKAWA, Y ;
NAKAMURA, S .
JAPANESE JOURNAL OF APPLIED PHYSICS, 1978, 17 (02) :321-327
[28]   OXIDATION OF GAP AND GAAS [J].
RUBENSTEIN, M .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1966, 113 (06) :540-+
[29]   INTERFACIAL REACTIONS IN PLASMA-GROWN NATIVE OXIDE-GAAS STRUCTURES [J].
SCHWARTZ, GP ;
SCHWARTZ, B ;
GRIFFITHS, JE ;
SUGANO, T .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (10) :2269-2273
[30]   X-RAY PHOTOELECTRON-SPECTROSCOPY STUDY OF NATIVE OXIDES ON GAAS [J].
SCHWARTZ, GP ;
GUALTIERI, GJ ;
KAMMLOTT, GW ;
SCHWARTZ, B .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (10) :1737-1749