THERMAL FILLING EFFECTS IN CAPACITANCE EXPERIMENTS ON DEEP LEVELS IN SEMICONDUCTORS

被引：16

作者：

NORAS, JM ^{[1
]}

SZAWELSKA, HR ^{[1
]}

机构：

[1] UNIV ST ANDREWS,WOLFSON INST LUMINESCENCE,ST ANDREWS KY16 9SS,SCOTLAND

来源：

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS | 1982年 / 15卷 / 09期

关键词：

D O I：

10.1088/0022-3719/15/9/020

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

收藏

页码：2001 / 2009

页数：9

相关论文

共 23 条

[1] DEEP-LEVEL THERMAL SPECTROSCOPY AND DEEP-LEVEL OPTICAL SPECTROSCOPY - APPLICATION TO STUDY OF LATTICE-RELAXATION
BOIS, D
CHANTRE, A
[J]. REVUE DE PHYSIQUE APPLIQUEE, 1980, 15 (03): : 631 - 646
[2] BOIS D, 1979, I PHYS C SER, V43, P295
[3] THERMAL AND OPTICAL GENERATION CURRENT IN REVERSE-BIASED GOLD-DOPED SILICON P+N JUNCTIONS WITHOUT DEPLETION APPROXIMATION
BRAUN, S
GRIMMEISS, HG
[J]. JOURNAL OF APPLIED PHYSICS, 1973, 44 (06) : 2789 - 2794
[4] DEEP-LEVEL OPTICAL SPECTROSCOPY IN GAAS
CHANTRE, A
VINCENT, G
DUBOIS
[J]. PHYSICAL REVIEW B, 1981, 23 (10): : 5335 - 5359
[5] DEVEAUD B, 1980, P C SEMIINSULATING 3, P241
[6] DETERMINATION OF DEEP LEVELS IN SEMICONDUCTORS FROM C-V MEASUREMENTS
GLOVER, GH
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1972, ED19 (02) : 138 - &
[7] EXCITED-STATES AT DEEP CENTERS IN SI-S AND SI-SE
GRIMMEISS, HG
SKARSTAM, B
[J]. PHYSICAL REVIEW B, 1981, 23 (04): : 1947 - 1960
[8] ELECTRIC AND OPTICAL-PROPERTIES OF THE CU-RED CENTER IN ZNSE
GRIMMEISS, HG
OVREN, C
MACH, R
[J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (10) : 6328 - 6333
[9] CAPTURE FROM FREE-CARRIER TAILS IN THE DEPLETION REGION OF JUNCTION BARRIERS
GRIMMEISS, HG
LEDEBO, LA
MEIJER, E
[J]. APPLIED PHYSICS LETTERS, 1980, 36 (04) : 307 - 308
[10] GRIMMEISS HG, 1979, LECTURE NOTES PHYSIC, V122, P50