THERMAL-EQUILIBRIUM PROCESSES AND ELECTRONIC TRANSPORT IN UNDOPED HYDROGENATED AMORPHOUS-SILICON

被引:14
作者
MEAUDRE, R
MEAUDRE, M
JENSEN, P
GUIRAUD, G
机构
[1] Univ Claude Bernard Lyon I, Villeurbanne, Fr, Univ Claude Bernard Lyon I, Villeurbanne, Fr
关键词
D O I
10.1080/09500838808214720
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
15
引用
收藏
页码:315 / 320
页数:6
相关论文
共 16 条
[1]  
AST DG, 1979, I PHYSICS C SERIES, V434, P1159
[2]   CONDUCTIVITY AND QUENCHED-IN DEFECTS IN HYDROGENATED AMORPHOUS-SILICON [J].
BRANZ, HM ;
CAPUDER, K ;
LYONS, EH ;
HAGGERTY, JS ;
ADLER, D .
PHYSICAL REVIEW B, 1987, 36 (15) :7934-7940
[3]   POOLE-FRENKEL CONDUCTION IN AMORPHOUS SOLIDS [J].
HILL, RM .
PHILOSOPHICAL MAGAZINE, 1971, 23 (181) :59-&
[4]   STRETCHED-EXPONENTIAL RELAXATION ARISING FROM DISPERSIVE DIFFUSION OF HYDROGEN IN AMORPHOUS-SILICON [J].
KAKALIOS, J ;
STREET, RA ;
JACKSON, WB .
PHYSICAL REVIEW LETTERS, 1987, 59 (09) :1037-1040
[5]   ELECTRONIC TRANSPORT IN DOPED AMORPHOUS-SILICON [J].
KAKALIOS, J ;
STREET, RA .
PHYSICAL REVIEW B, 1986, 34 (08) :6014-6017
[6]  
KAKALIOS J, 1987, AIP C P, V157, P179
[7]   EQUILIBRIUM TEMPERATURE AND RELATED DEFECTS IN INTRINSIC GLOW-DISCHARGE AMORPHOUS-SILICON [J].
MCMAHON, TJ ;
TSU, R .
APPLIED PHYSICS LETTERS, 1987, 51 (06) :412-414
[8]   INFLUENCE OF NITROGEN INCORPORATION ON THE DENSITY OF GAP STATES IN AMORPHOUS HYDROGENATED SILICON [J].
MEAUDRE, M ;
MEAUDRE, R .
PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1987, 55 (03) :417-426
[9]   WIDE OPTICAL GAP, UNDOPED, PHOTOCONDUCTIVE A-SIXN1-X-H PREPARED BY DC SPUTTERING [J].
MEAUDRE, R ;
TARDY, J .
SOLID STATE COMMUNICATIONS, 1983, 48 (02) :117-119
[10]  
PFISTER G, 1977, 7TH P INT C AM LIQ S, P197