INFLUENCE OF NITROGEN INCORPORATION ON THE DENSITY OF GAP STATES IN AMORPHOUS HYDROGENATED SILICON

被引：20

作者：

MEAUDRE, M

MEAUDRE, R

机构：

来源：

PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES | 1987年 / 55卷 / 03期

关键词：

D O I：

10.1080/13642818708208625

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：417 / 426

页数：10

共 31 条

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