ELECTRON-BEAM SYSTEM FOR RAPID ISOTHERMAL ANNEALING OF SEMICONDUCTOR-MATERIALS AND DEVICES

被引:24
作者
MCMAHON, RA
HASKO, DG
AHMED, H
机构
关键词
D O I
10.1063/1.1137987
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
引用
收藏
页码:1257 / 1261
页数:5
相关论文
共 19 条
[1]  
Ahmed H., 1983, Laser-Solid Interactions and Transient Thermal Processing of Materials, P653
[2]  
BROERS AN, 1972, 5TH P INT C EL ION B, P3
[3]  
CARSLAW HS, 1959, CONDUCTION HEAT SOLI
[4]   THE USE OF REFRACTORY-METAL AND ELECTRON-BEAM SINTERING TO REDUCE CONTACT RESISTANCE FOR VLSI [J].
CHEN, JYT ;
RENSCH, DB .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1983, 30 (11) :1542-1550
[5]   HEAT TREATING AND MELTING MATERIAL WITH A SCANNING LASER OR ELECTRON-BEAM [J].
CLINE, HE ;
ANTHONY, TR .
JOURNAL OF APPLIED PHYSICS, 1977, 48 (09) :3895-3900
[6]   BACKSCATTERING OF 10-100 KEV ELECTRONS FROM THICK TARGETS [J].
DARLINGTON, EH .
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1975, 8 (01) :85-93
[7]   RECRYSTALLIZATION OF CVD POLY-SI ON INSULATOR BY DUAL ELECTRON-BEAM PROCESSING [J].
DAVIS, JR ;
MCMAHON, RA ;
AHMED, H .
ELECTRONICS LETTERS, 1982, 18 (04) :163-164
[8]   RAPID ISOTHERMAL ANNEALING OF ION-IMPLANTATION DAMAGE USING A THERMAL-RADIATION SOURCE [J].
FULKS, RT ;
RUSSO, CJ ;
HANLEY, PR ;
KAMINS, TI .
APPLIED PHYSICS LETTERS, 1981, 39 (08) :604-606
[9]  
GODFREY DJ, 1983, J PHYS C, V5, P229
[10]   PLASMA ANNEALING OF ION-IMPLANTED SEMICONDUCTORS [J].
IANNO, NJ ;
VERDEYEN, JT ;
CHAN, SS ;
STREETMAN, BG .
APPLIED PHYSICS LETTERS, 1981, 39 (08) :622-624