DEEP-LEVEL ELECTRON TRAPS IN VAPOR-PHASE EPITAXIAL GAAS GROWN WITH OXYGEN INJECTION

被引：16

作者：

RUBY, DS

ARAI, K

STILLMAN, GE

机构：

[1] UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801

[2] UNIV ILLINOIS,COORDINATED SCI LAB,URBANA,IL 61801

来源：

JOURNAL OF APPLIED PHYSICS | 1985年 / 58卷 / 02期

关键词：

D O I：

10.1063/1.336151

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：825 / 830

页数：6

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