ANALYSIS OF THE LATCH AND BREAKDOWN PHENOMENA IN N AND P CHANNEL THIN-FILM SOI MOSFETS AS A FUNCTION OF TEMPERATURE

A study of the latch and breakdown phenomena in thin film N- and P-channel SOI MOSFET's is performed as a function of temperature. For P-type MOSFET's, for which no investigation of the parasitic bipolar transistor has been carried out, we show that latch problems are observed in the subhalf-micrometer range, while this feature is emphasized in the micrometer range for N-channel transistors. In addition, it is demonstrated by theoretical considerations and experimental results that these parasitic effects ai e strongly reduced at liquid nitrogen temperature and vanish almost entirely at liquid helium temperature. Similar improvements are obtained at low temperature in both N and P-channel SIMOX MOSFET's.