HIGH-PRECISION DETERMINATION OF STRUCTURE FACTORS FH OF SILICON

被引：65

作者：

TEWORTE, R

BONSE, U

机构：

来源：

PHYSICAL REVIEW B | 1984年 / 29卷 / 04期

关键词：

D O I：

10.1103/PhysRevB.29.2102

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：2102 / 2108

页数：7

共 36 条

[1] ELECTRON-DISTRIBUTION IN SILICON .1. EXPERIMENT [J].

ALDRED, PJE ;

HART, M .

PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1973, 332 (1589) :223-+

[2]

ALDRED PJE, 1971, THESIS U BRISTOL

[3] PENDELLOSUNG MEASUREMENT OF ATOMIC SCATTERING FACTOR OF GERMANIUM [J].

BATTERMA.BW ;

PATEL, JR .

JOURNAL OF APPLIED PHYSICS, 1968, 39 (03) :1882-&

[4] VIBRATIONAL AMPLITUDES IN GERMANIUM AND SILICON [J].

BATTERMAN, BW ;

CHIPMAN, DR .

PHYSICAL REVIEW, 1962, 127 (03) :690-&

[5] THE LATTICE-PARAMETER OF HIGHLY PURE SILICON SINGLE-CRYSTALS [J].

BECKER, P ;

SEYFRIED, P ;

SIEGERT, H .

ZEITSCHRIFT FUR PHYSIK B-CONDENSED MATTER, 1982, 48 (01) :17-21

[6]

BLAKE LH, 1969, IBM TR190062

[7] A ROTATION STAGE FOR PRECISE ALIGNMENT AT THE 10-3 SEC OF ARC LEVEL [J].

BONSE, U ;

TEWORTE, R .

JOURNAL OF PHYSICS E-SCIENTIFIC INSTRUMENTS, 1982, 15 (02) :187-190

[8] X-RAY-MEASUREMENT OF MINUTE LATTICE STRAIN IN PERFECT SILICON-CRYSTALS [J].

BONSE, U ;

HARTMANN, I .

ZEITSCHRIFT FUR KRISTALLOGRAPHIE, 1981, 156 (3-4) :265-279

[9] THE MEASUREMENT OF THE X-RAY-SCATTERING FACTORS OF SILICON FROM THE FINE-STRUCTURE OF LAUE-CASE ROCKING CURVES [J].

BONSE, U ;

TEWORTE, R .

JOURNAL OF APPLIED CRYSTALLOGRAPHY, 1980, 13 (OCT) :410-416

[10] THEORIE DER AUSBREITUNG VON RONTGEN-WELLENFELDSTRAHLEN IM SCHWACH DEFORMIERTEN KRISTALLGITTER [J].

BONSE, U .

ZEITSCHRIFT FUR PHYSIK, 1964, 177 (04) :385-&

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