INTERFACIAL STRUCTURES AND SELECTIVE GROWTH OF DIAMOND PARTICLES FORMED BY PLASMA-ASSISTED CVD

被引:14
作者
MA, JS
KAWARADA, H
YONEHARA, T
SUZUKI, J
WEI, J
YOKOTA, Y
MORI, H
FUJITA, H
HIRAKI, A
机构
[1] Faculty of Engineering, Osaka University, Suita-shi, Osaka
关键词
D O I
10.1016/0169-4332(89)90124-4
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Internal and interfacial observations of diamond particles formed by plasma-assisted CVD have been carried out using an ultra-high-voltage transmission electron microscope from especially cross-sectional view. Diamond particles deposited at lower CH4 concentrations are faceted polyhedra, and line defects composed of micro-twin lamellae are found to emerge from the base center area, indicating that diamond nucleates at a site, then grows to form the polyhedron. Based on these observations, a nucleation control study has been carried out. SiO2-patterned Si substrate is firstly roughened by abrasive powders, then irradiated by an Ar beam at a certain angle. After deposition on this substrate using plasma-assisted CVD, diamond particles have been selectively grown on particular positions on the SiO2 dots. © 1989.
引用
收藏
页码:572 / 579
页数:8
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